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DOI	10.1016/j.scib.2021.04.018
	Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator
	Li H.; Ye S.; Zhao J.; Jin C.; Wang Y.
发表日期	2021
ISSN	20959273
起始页码	1395
结束页码	1400
卷号	66 期号:14
英文摘要	We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice. These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates. © 2021 Science China Press
关键词	Charge transfer gap Cuprates Impurity state Mott insulator Scanning tunneling microscopy
英文关键词	Calcium compounds; Chlorine compounds; Copper compounds; Electronic states; Mott insulators; Scanning tunneling microscopy; Atomic scale; Ca$+2+$; Charge-transfer gap; Cuprates; Energy; Impurity state; In-gap state; Lower energies; Mott insulators; Spectral weight; Charge transfer
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207460
作者单位	State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China; Songshan Lake Materials Laboratory, Dongguan, 523808, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China; Frontier Science Center for Quantum Information, Beijing, 100084, China
推荐引用方式 GB/T 7714	Li H.,Ye S.,Zhao J.,et al. Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator[J],2021,66(14).
APA	Li H.,Ye S.,Zhao J.,Jin C.,&Wang Y..(2021).Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator.Science Bulletin,66(14).
MLA	Li H.,et al."Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator".Science Bulletin 66.14(2021).