气候变化领域集成服务门户(CCPortal): Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

CCPortal

DOI	10.1016/j.scib.2020.04.019
	Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures
	Wang F.; Liu J.; Huang W.; Cheng R.; Yin L.; Wang J.; Sendeku M.G.; Zhang Y.; Zhan X.; Shan C.; Wang Z.; He J.
发表日期	2020
ISSN	20959273
起始页码	1444
结束页码	1450
卷号	65 期号:17
英文摘要	Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional (2D) subthermionic field-effect transistors (FETs) with sub-5 nm gate lengths based on ferroelectric (FE) van der Waals heterostructures (vdWHs). The FE vdWHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices. © 2020 Science China Press
关键词	Ferroelectric two-dimensional materials Short-channel field-effect transistor Subthermionic field-effect transistor van der Waals heterostructure
英文关键词	Copper compounds; Drain current; Energy efficiency; Ferroelectricity; Indium compounds; Layered semiconductors; Molybdenum compounds; Phosphorus compounds; Van der Waals forces; Advanced engineerings; Electronics research; Field effect transistor (FETs); Long channel devices; Metallic carbon nanotubes; Orders of magnitude; Three orders of magnitude; Two Dimensional (2 D); Field effect transistors
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207200
作者单位	CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China; School of Physics and Technology, Wuhan University, Wuhan, 430072, China; University of Chinese Academy of Sciences, Beijing, 100049, China; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics (Ministry of Education), School of Physics, Zhengzhou University, Zhengzhou, 450052, China
推荐引用方式 GB/T 7714	Wang F.,Liu J.,Huang W.,et al. Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures[J],2020,65(17).
APA	Wang F..,Liu J..,Huang W..,Cheng R..,Yin L..,...&He J..(2020).Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures.Science Bulletin,65(17).
MLA	Wang F.,et al."Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures".Science Bulletin 65.17(2020).