气候变化领域集成服务门户(CCPortal): Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing

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DOI	10.1073/pnas.2021768118
	Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing
	Gadalla M.N.; Greenspon A.S.; Defo R.K.; Zhang X.; Hu E.L.
发表日期	2021
ISSN	00278424
卷号	118 期号:12
英文摘要	The negatively charged silicon monovacancy V Si in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the V Si, yet fine-tuning the defect–cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the V1′ optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies. Below-bandgap irradiation at 785-nm and 532-nm wavelengths carried out at times ranging from a few minutes to several hours results in stable enhancement of emission, believed to result from changing the relative ratio of V0Si (“dark state”) to V Si (“bright state”). The much faster change effected by 532-nm irradiation may result from cooperative charge-state conversion due to proximal defects. Thermal annealing at 100 °C, carried out over 20 min, also results in emission enhancements and may be explained by the relatively low-activation energy diffusion of carbon interstitials Ci, subsequently recombining with other defects to create additional V Sis. These PCC-enabled experiments reveal insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improved defect–cavity interactions. © 2021 National Academy of Sciences. All rights reserved.
英文关键词	Cavity coupling \| silicon carbide \| point defect \| photonic crystal cavity \| Purcell enhancement
语种	英语
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/180161
作者单位	John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, United States; Department of Physics, Harvard University, Cambridge, MA 02138, United States; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02421, United States
推荐引用方式 GB/T 7714	Gadalla M.N.,Greenspon A.S.,Defo R.K.,et al. Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing[J],2021,118(12).
APA	Gadalla M.N.,Greenspon A.S.,Defo R.K.,Zhang X.,&Hu E.L..(2021).Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.Proceedings of the National Academy of Sciences of the United States of America,118(12).
MLA	Gadalla M.N.,et al."Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing".Proceedings of the National Academy of Sciences of the United States of America 118.12(2021).