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DOI | 10.7567/1347-4065/ab5599 |
Radiation damage in ?-Ga2O3 induced by swift heavy ions | |
Ai, Wensi; Xu, Lijun; Nan, Shuai; Zhai, Pengfei; Li, Weixing; Li, Zongzhen; Hu, Peipei; Zeng, Jian; Zhang, Shengxia; Liu, Li; Sun, Youmei; Liu, Jie | |
通讯作者 | Zhai, PF ; Liu, J (通讯作者) |
发表日期 | 2019 |
ISSN | 0021-4922 |
EISSN | 1347-4065 |
卷号 | 58期号:12 |
英文摘要 | The amorphous latent tracks in ?-Ga2O3 single crystal irradiated with ?5?10;MeV;u(?1) Ta-181 and Kr-86 ions were investigated by transmission electron microscopy (TEM). TEM images showed that the mean diameter of latent tracks increased from 2.2 to 8.8;nm with electronic energy loss (S-e) values increasing from 18.3 to 41.5;keV;nm(?1). Moreover, the inelastic thermal spike model was used to predict the latent track size. The calculation results agreed well with the experimental results and the predicted S-e threshold of latent track formation in ?-Ga2O3 was about 17;keV;nm(?1) for 5?10;MeV;u(?1) heavy ions. |
关键词 | THERMAL SPIKE MODELTRACK FORMATIONCROSS-SECTIONAMORPHIZATIONIRRADIATIONOXIDES |
语种 | 英语 |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:000499352200001 |
来源期刊 | JAPANESE JOURNAL OF APPLIED PHYSICS
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来源机构 | 中国科学院青藏高原研究所 |
文献类型 | 期刊论文 |
条目标识符 | http://gcip.llas.ac.cn/handle/2XKMVOVA/259428 |
推荐引用方式 GB/T 7714 | Ai, Wensi,Xu, Lijun,Nan, Shuai,et al. Radiation damage in ?-Ga2O3 induced by swift heavy ions[J]. 中国科学院青藏高原研究所,2019,58(12). |
APA | Ai, Wensi.,Xu, Lijun.,Nan, Shuai.,Zhai, Pengfei.,Li, Weixing.,...&Liu, Jie.(2019).Radiation damage in ?-Ga2O3 induced by swift heavy ions.JAPANESE JOURNAL OF APPLIED PHYSICS,58(12). |
MLA | Ai, Wensi,et al."Radiation damage in ?-Ga2O3 induced by swift heavy ions".JAPANESE JOURNAL OF APPLIED PHYSICS 58.12(2019). |
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