CCPortal
DOI10.7567/1347-4065/ab5599
Radiation damage in ?-Ga2O3 induced by swift heavy ions
Ai, Wensi; Xu, Lijun; Nan, Shuai; Zhai, Pengfei; Li, Weixing; Li, Zongzhen; Hu, Peipei; Zeng, Jian; Zhang, Shengxia; Liu, Li; Sun, Youmei; Liu, Jie
通讯作者Zhai, PF ; Liu, J (通讯作者)
发表日期2019
ISSN0021-4922
EISSN1347-4065
卷号58期号:12
英文摘要The amorphous latent tracks in ?-Ga2O3 single crystal irradiated with ?5?10;MeV;u(?1) Ta-181 and Kr-86 ions were investigated by transmission electron microscopy (TEM). TEM images showed that the mean diameter of latent tracks increased from 2.2 to 8.8;nm with electronic energy loss (S-e) values increasing from 18.3 to 41.5;keV;nm(?1). Moreover, the inelastic thermal spike model was used to predict the latent track size. The calculation results agreed well with the experimental results and the predicted S-e threshold of latent track formation in ?-Ga2O3 was about 17;keV;nm(?1) for 5?10;MeV;u(?1) heavy ions.
关键词THERMAL SPIKE MODELTRACK FORMATIONCROSS-SECTIONAMORPHIZATIONIRRADIATIONOXIDES
语种英语
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000499352200001
来源期刊JAPANESE JOURNAL OF APPLIED PHYSICS
来源机构中国科学院青藏高原研究所
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/259428
推荐引用方式
GB/T 7714
Ai, Wensi,Xu, Lijun,Nan, Shuai,et al. Radiation damage in ?-Ga2O3 induced by swift heavy ions[J]. 中国科学院青藏高原研究所,2019,58(12).
APA Ai, Wensi.,Xu, Lijun.,Nan, Shuai.,Zhai, Pengfei.,Li, Weixing.,...&Liu, Jie.(2019).Radiation damage in ?-Ga2O3 induced by swift heavy ions.JAPANESE JOURNAL OF APPLIED PHYSICS,58(12).
MLA Ai, Wensi,et al."Radiation damage in ?-Ga2O3 induced by swift heavy ions".JAPANESE JOURNAL OF APPLIED PHYSICS 58.12(2019).
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Ai, Wensi]的文章
[Xu, Lijun]的文章
[Nan, Shuai]的文章
百度学术
百度学术中相似的文章
[Ai, Wensi]的文章
[Xu, Lijun]的文章
[Nan, Shuai]的文章
必应学术
必应学术中相似的文章
[Ai, Wensi]的文章
[Xu, Lijun]的文章
[Nan, Shuai]的文章
相关权益政策
暂无数据
收藏/分享

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。