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DOI | 10.1016/j.scib.2021.12.014 |
Tactile tribotronic reconfigurable p-n junctions for artificial synapses | |
Jia M.; Guo P.; Wang W.; Yu A.; Zhang Y.; Wang Z.L.; Zhai J. | |
发表日期 | 2022 |
英文摘要 | The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems. Here, a robust and continuously adjustable mechanoplastic semifloating-gate transistor is demonstrated based on an integrated graphene/hexagonal boron nitride/tungsten diselenide van der Waals heterostructure and a triboelectric nanogenerator (TENG). The working states (p-n junction or n+-n junction) can be manipulated and switched under the sophisticated modulation of triboelectric potential derived from mechanical actions, which is attributed to carriers trapping and detrapping in the graphene layer. Furthermore, a reconfigurable artificial synapse is constructed based on such mechanoplastic transistor that can simulate typical synaptic plasticity and implement dynamic control correlations in each response mode by further designing the amplitude and duration. The artificial synapse can work with ultra-low energy consumption at 74.2 fJ per synaptic event and the extended synaptic weights. Under the synergetic effect of the semifloating gate, the synaptic device can enable successive mechanical facilitation/depression, short-/long-term plasticity and learning-experience behavior, exhibiting the mechanical behavior derived synaptic plasticity. Such reconfigurable and mechanoplastic features provide an insight into the applications of energy-efficient and real-time interactive neuromodulation in the future artificial intelligent system beyond von Neumann architecture. © 2021 Science China Press |
英文关键词 | Artificial synapses; Reconfigurable p-n junction; Semifloating-gate transistor; Synaptic plasticity; Triboelectric potential |
语种 | 英语 |
scopus关键词 | Energy efficiency; Energy utilization; III-V semiconductors; Intelligent systems; Reconfigurable architectures; Selenium compounds; Semiconductor junctions; Van der Waals forces; Artificial synapse; Biological synapse; Gate transistors; P-n junction; Reconfigurable; Reconfigurable p-n junction; Semi floating-gates; Semifloating-gate transistor; Synaptic plasticity; Triboelectric potential; Graphene |
来源期刊 | Science Bulletin
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文献类型 | 期刊论文 |
条目标识符 | http://gcip.llas.ac.cn/handle/2XKMVOVA/251214 |
作者单位 | CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States |
推荐引用方式 GB/T 7714 | Jia M.,Guo P.,Wang W.,et al. Tactile tribotronic reconfigurable p-n junctions for artificial synapses[J],2022. |
APA | Jia M..,Guo P..,Wang W..,Yu A..,Zhang Y..,...&Zhai J..(2022).Tactile tribotronic reconfigurable p-n junctions for artificial synapses.Science Bulletin. |
MLA | Jia M.,et al."Tactile tribotronic reconfigurable p-n junctions for artificial synapses".Science Bulletin (2022). |
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