气候变化领域集成服务门户(CCPortal): Modeling of emergent memory and voltage spiking in ionic transport through angstrom-scale slits

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DOI	10.1126/science.abf7923
	Modeling of emergent memory and voltage spiking in ionic transport through angstrom-scale slits
	Robin P.; Kavokine N.; Bocquet L.
发表日期	2021
ISSN	0036-8075
起始页码	687
结束页码	691
卷号	373 期号:6555
英文摘要	Recent advances in nanofluidics have enabled the confinement of water down to a single molecular layer. Such monolayer electrolytes show promise in achieving bioinspired functionalities through molecular control of ion transport. However, the understanding of ion dynamics in these systems is still scarce. Here, we develop an analytical theory, backed up by molecular dynamics simulations, that predicts strongly nonlinear effects in ion transport across quasi-two-dimensional slits. We show that under an electric field, ions assemble into elongated clusters, whose slow dynamics result in hysteretic conduction. This phenomenon, known as the memristor effect, can be harnessed to build an elementary neuron. As a proof of concept, we carry out molecular simulations of two nanofluidic slits that reproduce the Hodgkin-Huxley model and observe spontaneous emission of voltage spikes characteristic of neuromorphic activity. © 2021 American Association for the Advancement of Science. All rights reserved.
英文关键词	ionic liquid; memory; nanotechnology; neurology; simulation; article; electric field; Hodgkin Huxley equation; ion transport; memory; molecular dynamics; nerve cell; proof of concept; spike; Elliptio dilatata
语种	英语
来源期刊	Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/245246
作者单位	Laboratoire de Physique de l'École Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, F-75005, France
推荐引用方式 GB/T 7714	Robin P.,Kavokine N.,Bocquet L.. Modeling of emergent memory and voltage spiking in ionic transport through angstrom-scale slits[J],2021,373(6555).
APA	Robin P.,Kavokine N.,&Bocquet L..(2021).Modeling of emergent memory and voltage spiking in ionic transport through angstrom-scale slits.Science,373(6555).
MLA	Robin P.,et al."Modeling of emergent memory and voltage spiking in ionic transport through angstrom-scale slits".Science 373.6555(2021).