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DOI10.1126/science.1081294
Electrically induced optical emission from a carbon nanotube FET
Misewich J.A.; Martel R.; Avouris Ph.; Tsang J.C.; Heinze S.; Tersoff J.
发表日期2003
ISSN0036-8075
起始页码783
结束页码786
卷号300期号:5620
英文摘要Polarized infrared optical emission was observed from a carbon nanotube ambipolar field-effect transistor (FET). An effective forward-biased p-n junction, without chemical dopants, was created in the nanotube by appropriately biasing the nanotube device. Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simultaneously injected into the undoped nanotube. These observations are consistent with a nanotube FET model in which thin Schottky barriers form at the source and drain contacts. This arrangement is a novel optical recombination radiation source in which the electrons and holes are injected into a nearly field-free region. Such a source may form the basis for ultrasmall integrated photonic devices.
英文关键词Bipolar transistors; Field effect transistors; Infrared radiation; Light emission; Light polarization; Schottky barrier diodes; Semiconductor doping; Junction biasing; Optical recombination processes; Carbon nanotubes; carbon; emission; nanotechnology; article; electron; field emission; infrared radiation; measurement; nanotechnology; optics; photon; priority journal; semiconductor
语种英语
来源期刊Science
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/244790
作者单位IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598-0218, United States; Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States
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Misewich J.A.,Martel R.,Avouris Ph.,et al. Electrically induced optical emission from a carbon nanotube FET[J],2003,300(5620).
APA Misewich J.A.,Martel R.,Avouris Ph.,Tsang J.C.,Heinze S.,&Tersoff J..(2003).Electrically induced optical emission from a carbon nanotube FET.Science,300(5620).
MLA Misewich J.A.,et al."Electrically induced optical emission from a carbon nanotube FET".Science 300.5620(2003).
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