气候变化领域集成服务门户(CCPortal): Local Gate Control of a Carbon Nanotube Double Quantum Dot

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DOI	10.1126/science.1093605
	Local Gate Control of a Carbon Nanotube Double Quantum Dot
	Mason N.; Biercuk M.J.; Marcus C.H.
发表日期	2004
ISSN	0036-8075
起始页码	655
结束页码	658
卷号	303 期号:5658
英文摘要	We have measured carbon nanotube quantum dots with multiple electrostatic gates and used the resulting enhanced control to investigate a nanotube double quantum dot. Transport measurements reveal honeycomb charge stability diagrams as a function of two nearly independent gate voltages. The device can be tuned from weak to strong interdot tunnel-coupling regimes, and the transparency of the leads can be controlled independently. We extract values of energy-level spacings, capacitances, and interaction energies for this system. This ability to control electron interactions in the quantum regime in a molecular conductor is important for applications such as quantum computation.
英文关键词	Electric conductors; Electric potential; Gates (transistor); Semiconductor quantum dots; Quantum computation; Carbon nanotubes; carbon nanotube; nanotechnology; article; calculation; conductor; device; electric capacitance; electric potential; electricity; energy; molecular dynamics; priority journal; quantum theory
语种	英语
来源期刊	Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/244676
作者单位	Department of Physics, Harvard University, Cambridge, MA 02138, United States
推荐引用方式 GB/T 7714	Mason N.,Biercuk M.J.,Marcus C.H.. Local Gate Control of a Carbon Nanotube Double Quantum Dot[J],2004,303(5658).
APA	Mason N.,Biercuk M.J.,&Marcus C.H..(2004).Local Gate Control of a Carbon Nanotube Double Quantum Dot.Science,303(5658).
MLA	Mason N.,et al."Local Gate Control of a Carbon Nanotube Double Quantum Dot".Science 303.5658(2004).