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DOI10.1126/science.273.5277.898
Synthesis of novel thin-film materials by pulsed laser deposition
Lowndes D.H.; Geohegan D.B.; Puretzky A.A.; Norton D.P.; Rouleau C.M.
发表日期1996
ISSN0036-8075
起始页码898
结束页码903
卷号273期号:5277
英文摘要Pulsed laser deposition (PLD) is a conceptually and experimentally simple yet highly versatile tool for thin-film and multilayer research. Its advantages for the film growth of oxides and other chemically complex materials include stoichiometric transfer, growth from an energetic beam, reactive deposition, and inherent simplicity for the growth of multilayered structures. With the use of PLD, artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses. In situ monitoring techniques have provided information about the role of energetic species in the formation of ultrahard phases and in the doping of semiconductors. Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD.Pulsed laser deposition (PLD) is a conceptually and experimentally simple yet highly versatile tool for thin-film and multilayer research. Its advantages for the film growth of oxides and other chemically complex materials include stoichiometric transfer, growth from an energetic beam, reactive deposition, and inherent simplicity for the growth of multilayered structures. With the use of PLD, artificially layered materials and metastable phases have been created and their properties varied by control of the layer thicknesses. In situ monitoring techniques have provided information about the role of energetic species in the formation of ultrahard phases and in the doping of semiconductors. Cluster-assembled nanocrystalline and composite films offer opportunities to control and produce new combinations of properties with PLD.
英文关键词Composite materials; Deposition; Film growth; Laser ablation; Laser beams; Multilayers; Nanostructured materials; Oxides; Pulsed laser applications; Semiconductor doping; Synthesis (chemical); Thickness control; Composite films; Film deposition; In situ monitoring; Pulsed laser deposition; Reactive deposition; Stoichiometric transfer; Thin films; oxide; article; crystallization; electronics; energy transfer; film; hardness; laser surgery; materials; priority journal; pulsed dye laser; research; semiconductor; stoichiometry; synthesis; thickness
语种英语
来源期刊Science
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/244582
作者单位Solid State Division, Oak Ridge National Laboratory, Post Office Box 2008, Oak Ridge, TN 37831-6056, United States; Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Russian Federation
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Lowndes D.H.,Geohegan D.B.,Puretzky A.A.,et al. Synthesis of novel thin-film materials by pulsed laser deposition[J],1996,273(5277).
APA Lowndes D.H.,Geohegan D.B.,Puretzky A.A.,Norton D.P.,&Rouleau C.M..(1996).Synthesis of novel thin-film materials by pulsed laser deposition.Science,273(5277).
MLA Lowndes D.H.,et al."Synthesis of novel thin-film materials by pulsed laser deposition".Science 273.5277(1996).
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