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DOI10.1126/science.282.5390.932
Spontaneous emission spectrum in double quantum dot devices
Fujisawa T.; Oosterkamp T.H.; Van Der Wiel W.G.; Broer B.W.; Aguado R.; Tarucha S.; Kouwenhoven L.P.
发表日期1998
ISSN0036-8075
起始页码932
结束页码935
卷号282期号:5390
英文摘要A double quantum dot device is a tunable two-level system for electronic energy states. A dc electron current was used to directly measure the rates for elastic and inelastic transitions between the two levels. For inelastic transitions, energy is exchanged with bosonic degrees of freedom in the environment. The inelastic transition rates are well described by the Einstein coefficients, relating absorption with stimulated and spontaneous emission. The most effectively coupled bosons in the specific environment of the semiconductor device used here were acoustic phonons. The experiments demonstrate the importance of vacuum fluctuations in the environment for quantum dot devices and potential design constraints for their use for preparing long-lived quantum states.
英文关键词article; elasticity; priority journal; quantum mechanics; semiconductor; spectrophotometry
语种英语
来源期刊Science (IF:41.037[JCR-2018],43.644[5-Year])
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/243748
作者单位Dept. of Applied Physics and DIMES, Delft University of Technology, 2600 GA Delft, Netherlands; NTT Basic Research Laboratories, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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Fujisawa T.,Oosterkamp T.H.,Van Der Wiel W.G.,et al. Spontaneous emission spectrum in double quantum dot devices[J],1998,282(5390).
APA Fujisawa T..,Oosterkamp T.H..,Van Der Wiel W.G..,Broer B.W..,Aguado R..,...&Kouwenhoven L.P..(1998).Spontaneous emission spectrum in double quantum dot devices.Science,282(5390).
MLA Fujisawa T.,et al."Spontaneous emission spectrum in double quantum dot devices".Science 282.5390(1998).
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