气候变化领域集成服务门户(CCPortal): Polytype distribution in circumstellar silicon carbide

CCPortal

DOI	10.1126/science.1071136
	Polytype distribution in circumstellar silicon carbide
	Daulton T.L.; Bernatowicz T.J.; Lewis R.S.; Messenger S.; Stadermann F.J.; Amari S.
发表日期	2002
ISSN	0036-8075
起始页码	1852
结束页码	1855
卷号	296 期号:5574
英文摘要	The inferred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra is controversial. We have directly determined the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite. Only two polytypes (of a possible several hundred) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths. We conclude that this structural simplicity is a direct consequence of the low pressures in circumstellar outflows and the corresponding low silicon carbide condensation temperatures.
英文关键词	Astrophysics; Crystal growth; Crystallography; Meteorites; Transmission electron microscopy; Polytypes; Silicon carbide; silicon carbide; silicon; transmission electron microscopy; article; crystallography; grain; infrared spectroscopy; polymerization; priority journal; temperature; transmission electron microscopy; Astronomy; Carbon Compounds, Inorganic; Meteoroids; Microscopy, Electron; Pressure; Silicon Compounds; Temperature
语种	英语
来源期刊	Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/243464
作者单位	Materials Science Division, Argonne National Laboratory, Argonne IL, 60439-4838, United States
推荐引用方式 GB/T 7714	Daulton T.L.,Bernatowicz T.J.,Lewis R.S.,et al. Polytype distribution in circumstellar silicon carbide[J],2002,296(5574).
APA	Daulton T.L.,Bernatowicz T.J.,Lewis R.S.,Messenger S.,Stadermann F.J.,&Amari S..(2002).Polytype distribution in circumstellar silicon carbide.Science,296(5574).
MLA	Daulton T.L.,et al."Polytype distribution in circumstellar silicon carbide".Science 296.5574(2002).