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DOI10.1073/pnas.2111790118
Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors
Yao Y.; Huang W.; Chen J.; Wang G.; Chen H.; Zhuang X.; Ying Y.; Ping J.; Marks T.J.; Facchetti A.
发表日期2021
ISSN0027-8424
卷号118期号:44
英文摘要Electrolyte-gated transistors (EGTs) hold great promise for nextgeneration printed logic circuitry, biocompatible integrated sensors, and neuromorphic devices. However, EGT-based complementary circuits with high voltage gain and ultralow driving voltage (<0.5 V) are currently unrealized, because achieving balanced electrical output for both the p- and n-type EGT components has not been possible with current materials. Here we report highperformance EGT complementary circuits containing p-type organic electrochemical transistors (OECTs) fabricated with an ionpermeable organic semiconducting polymer (DPP-g2T) and an n-type electrical double-layer transistor (EDLT) fabricated with an ion-impermeable inorganic indium-gallium-zinc oxide (IGZO) semiconductor. Adjusting the IGZO composition enables tunable EDLT output which, for In:Ga:Zn = 10:1:1 at%, balances that of the DPP-g2T OECT. The resulting hybrid electrolyte-gated inverter (HCIN) achieves ultrahigh voltage gains (>110) under a supply voltage of only 0.7 V. Furthermore, NAND and NOR logic circuits on both rigid and flexible substrates are realized, enabling not only excellent logic response with driving voltages as low as 0.2 V but also impressive mechanical flexibility down to 1-mm bending radii. Finally, the HCIN was applied in electrooculographic (EOG) signal monitoring for recording eye movement, which is critical for the development of wearable medical sensors and also interfaces for human-computer interaction; the high voltage amplification of the present HCIN enables EOG signal amplification and monitoring in which a small ∼1.5 mV signal is amplified to ∼30 mV. © 2021 National Academy of Sciences. All rights reserved.
英文关键词Complementary circuit; Electrolyte-gated transistor; EOG sensing; Flexible electronics
语种英语
来源期刊Proceedings of the National Academy of Sciences of the United States of America
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/238320
作者单位School of Biosystems Engineering and Food Science, Zhejiang University, Hangzhou, 310058, China; Department of Chemistry, Northwestern University, Evanston, IL 60208, United States; Materials Research Center, Northwestern University, Evanston, IL 60208, United States; School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China; Flexterra Inc., Skokie, IL 60077, United States
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Yao Y.,Huang W.,Chen J.,et al. Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors[J],2021,118(44).
APA Yao Y..,Huang W..,Chen J..,Wang G..,Chen H..,...&Facchetti A..(2021).Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors.Proceedings of the National Academy of Sciences of the United States of America,118(44).
MLA Yao Y.,et al."Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors".Proceedings of the National Academy of Sciences of the United States of America 118.44(2021).
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