气候变化领域集成服务门户(CCPortal): Realization of a non-markov chain in a single 2D mineral RRAM

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DOI	10.1016/j.scib.2021.04.025
	Realization of a non-markov chain in a single 2D mineral RRAM
	Zhang R.; Chen W.; Teng C.; Liao W.; Liu B.; Cheng H.-M.
发表日期	2021
ISSN	20959273
起始页码	1634
结束页码	1640
卷号	66 期号:16
英文摘要	The non-Markov process exists widely in thermodymanic process, while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices have the potential for next-generation computing systems with much-reduced complexity. Here, we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure. We find that the potassium ions (K+) in 2D mica gradually move in the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is changed by an electric field, and the 2D-mica RRAM has both single and double memory windows, a high on/off ratio, decent stability, and repeatability. This is the first time a non-Markov chain process has been established in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers an intrinsic inner ionic conductivity of 2D mica, but also opens the door for the production of such RRAM devices with numerous functions and applications. © 2021 Science China Press
关键词	2D materials Ion transport Mica Non-Markov chain RRAM
英文关键词	Electric fields; Markov processes; RRAM; 2d material; Ion-transport; Material-based; Non-markov chain; Non-markov process; Random access memory; Resistive random access memory; Systems complexity; Traditional devices; Two-dimensional; Mica
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207670
作者单位	Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
推荐引用方式 GB/T 7714	Zhang R.,Chen W.,Teng C.,et al. Realization of a non-markov chain in a single 2D mineral RRAM[J],2021,66(16).
APA	Zhang R.,Chen W.,Teng C.,Liao W.,Liu B.,&Cheng H.-M..(2021).Realization of a non-markov chain in a single 2D mineral RRAM.Science Bulletin,66(16).
MLA	Zhang R.,et al."Realization of a non-markov chain in a single 2D mineral RRAM".Science Bulletin 66.16(2021).