气候变化领域集成服务门户(CCPortal): Band structure engineering and defect control of Ta3N5 with enhanced photoelectrochemical water oxidation performance

CCPortal

DOI	10.1016/j.scib.2020.10.019
	Band structure engineering and defect control of Ta3N5 with enhanced photoelectrochemical water oxidation performance
	Wu L.; Zhang T.
发表日期	2021
ISSN	20959273
起始页码	651
结束页码	652
卷号	66 期号:7
英文摘要	[无可用摘要]
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207609
作者单位	Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
推荐引用方式 GB/T 7714	Wu L.,Zhang T.. Band structure engineering and defect control of Ta3N5 with enhanced photoelectrochemical water oxidation performance[J],2021,66(7).
APA	Wu L.,&Zhang T..(2021).Band structure engineering and defect control of Ta3N5 with enhanced photoelectrochemical water oxidation performance.Science Bulletin,66(7).
MLA	Wu L.,et al."Band structure engineering and defect control of Ta3N5 with enhanced photoelectrochemical water oxidation performance".Science Bulletin 66.7(2021).