气候变化领域集成服务门户(CCPortal): Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

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DOI	10.1016/j.scib.2021.06.020
	Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor
	Wang J.; Wang F.; Wang Z.; Huang W.; Yao Y.; Wang Y.; Yang J.; Li N.; Yin L.; Cheng R.; Zhan X.; Shan C.; He J.
发表日期	2021
ISSN	20959273
英文摘要	Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution. Here, we show that logic, in-memory computing, and optoelectrical logic and non-volatile computing functionalities can be integrated into a single transistor with ferroelectric semiconducting α-In2Se3 as the channel. Two-input AND, OR, and non-volatile NOR and NAND logic operations with current on/off ratios reaching up to five orders, good endurance (1000 operation cycles), and fast operating speed (10 μs) are realized. In addition, optoelectrical OR logic and non-volatile implication (IMP) operations, as well as ternary-input optoelectrical logic and in-memory computing functions are achieved by introducing light as an additional input signal. Our work highlights the potential of integrating complex logic functions and new-type computing into a simple device based on emerging ferroelectric semiconductors. © 2021 Science China Press
关键词	In-memory computing Logic Non-volatile optoelectrical computing Optoelectrical logic Two-dimensional ferroelectric semiconductors
英文关键词	Computation theory; Computer circuits; Ferroelectric materials; Microelectronics; Transistors; Ferroelectric semiconductors; In-memory computing; Logic; Non-volatile; Non-volatile optoelectrical computing; Optoelectrical; Optoelectrical logic; Semiconductor transistors; Simple++; Two-dimensional ferroelectric semiconductor; Ferroelectricity
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207589
作者单位	CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China; Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China; Sino-Danish Centre for Education and Research, Beijing, 100049, China; School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
推荐引用方式 GB/T 7714	Wang J.,Wang F.,Wang Z.,et al. Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor[J],2021.
APA	Wang J..,Wang F..,Wang Z..,Huang W..,Yao Y..,...&He J..(2021).Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor.Science Bulletin.
MLA	Wang J.,et al."Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor".Science Bulletin (2021).