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DOI	10.1016/j.scib.2021.07.010
	Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution
	Liu K.; Chen X.; Gong P.; Yu R.; Wu J.; Li L.; Han W.; Yang S.; Zhang C.; Deng J.; Li A.; Zhang Q.; Zhuge F.; Zhai T.
发表日期	2021
ISSN	20959273
英文摘要	Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS2, remains cumbersome. Here we report on a facile strategy for the fabrication of highly strained MoS2 via chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance. The MoS2 resulting from the sulfurized MoTe2 sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS2/MoTe2 with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS2 bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices. © 2021 Science China Press
关键词	2D materials Chalcogenide substitution Controllable strain Lattice inheritance Strain engineering
英文关键词	Chalcogenides; Electronic properties; Layered semiconductors; Molybdenum compounds; Processing; Substitution reactions; Tellurium compounds; 2d material; Chalcogenide substitution; Controllable strain; Highly strained; Lattice inheritance; MoS$-2$; Property; Strain engineering; Strain limit; Two-dimensional; Strain
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207490
作者单位	State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China; Nano and Heterogeneous Materials Center, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China; Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, China; Institutes of Physical Science and Information Technology, Anhui University, Hefei, 231699, China; School of Physics and Technology, Wuhan University, Wuhan, 430072, China
推荐引用方式 GB/T 7714	Liu K.,Chen X.,Gong P.,et al. Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution[J],2021.
APA	Liu K..,Chen X..,Gong P..,Yu R..,Wu J..,...&Zhai T..(2021).Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution.Science Bulletin.
MLA	Liu K.,et al."Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution".Science Bulletin (2021).