气候变化领域集成服务门户(CCPortal): High-current MoS2 transistors with non-planar gate configuration

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DOI	10.1016/j.scib.2020.12.009
	High-current MoS2 transistors with non-planar gate configuration
	Lin J.; Wang B.; Yang Z.; Li G.; Zou X.; Chai Y.; Liu X.; Liao L.
发表日期	2021
ISSN	20959273
起始页码	777
结束页码	782
卷号	66 期号:8
英文摘要	The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body. Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional (2D) semiconductors. Here we design and demonstrate a 2D MoS2 transistor with omega-shaped gate, in which the local gate coupling is enhanced by the non-planar geometry. The omega-shaped non-planar transistors exhibit a high current of 0.89 A/μm and transconductance of 32.7 μS/μm. The high performance and desirable current saturation promise the construction of robust logic gate. The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89%. We also assemble NOT-AND (NAND) gate on an individual MoS2 flake, and the constructed NAND gate demonstrates the universal functionality of the transistors as well. This work provides an alternative strategy to fully take the advantages of 2D materials for high-performance field-effect transistors. © 2020 Science China Press
关键词	High current density MoS2 transistors Non-planar Omega-shaped gate
英文关键词	Geometry; Layered semiconductors; Molybdenum compounds; NAND circuits; Current saturation; Electrostatic control; Gate configuration; Intrinsic property; Non-planar transistors; Omega-shaped-gates; Planar geometries; Two Dimensional (2 D); Field effect transistors
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207482
作者单位	Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China; Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, Hong Kong; College of Microtechnology & Nanotechnology, Qingdao University, Qingdao, 266071, China; State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
推荐引用方式 GB/T 7714	Lin J.,Wang B.,Yang Z.,et al. High-current MoS2 transistors with non-planar gate configuration[J],2021,66(8).
APA	Lin J..,Wang B..,Yang Z..,Li G..,Zou X..,...&Liao L..(2021).High-current MoS2 transistors with non-planar gate configuration.Science Bulletin,66(8).
MLA	Lin J.,et al."High-current MoS2 transistors with non-planar gate configuration".Science Bulletin 66.8(2021).