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DOI	10.1016/j.scib.2020.02.018
	Near vacuum-ultraviolet aperiodic oscillation emission of AlN films
	Zhu Y.; Lin R.; Zheng W.; Ran J.; Huang F.
发表日期	2020
ISSN	20959273
起始页码	827
结束页码	831
卷号	65 期号:10
英文摘要	An accurate measurement of the refractive index is necessary for the optical design of both deep ultraviolet laser diodes and light-emitting diodes. Generally, the refractive indices along different crystallographic axes of anisotropic thin films are measured using variable angle spectroscopic ellipsometry. However, there are still some limitations concerning this method. Here we proposed a potential method to measure the band edge refractive index of wide bandgap semiconductor. An aperiodic oscillation emission phenomenon due to the Fabry-Perot effect was observed in the fluorescence spectrum of an AlN film with a thickness of 1500 nm. Based on the characteristics of the fluorescence spectrum and the definition of Fabry-Perot effect, we obtained the ordinary refractive index of the AlN thin film near the band edge directly. This refractive index measurement method is a supplement to the variable angle ellipsometry, and it is a more direct and effective method for transferred film and thinner samples to measure the fluorescence spectrum. © 2020 Science China Press
关键词	AlN Ellipsometer Fluorescence spectrum Refractive index
英文关键词	Aluminum nitride; Energy gap; Fabry-Perot interferometers; Fluorescence; III-V semiconductors; Optical design; Refractive index; Semiconductor diodes; Spectroscopic ellipsometry; Thin films; Ultraviolet lasers; Wide band gap semiconductors; Accurate measurement; Anisotropic thin films; Crystallographic axes; Deep ultraviolet lasers; Ellipsometers; Fluorescence spectra; Refractive index measurement; Variable angle spectroscopic ellipsometry; Nitrogen compounds
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207339
作者单位	State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, 510275, China; Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China
推荐引用方式 GB/T 7714	Zhu Y.,Lin R.,Zheng W.,et al. Near vacuum-ultraviolet aperiodic oscillation emission of AlN films[J],2020,65(10).
APA	Zhu Y.,Lin R.,Zheng W.,Ran J.,&Huang F..(2020).Near vacuum-ultraviolet aperiodic oscillation emission of AlN films.Science Bulletin,65(10).
MLA	Zhu Y.,et al."Near vacuum-ultraviolet aperiodic oscillation emission of AlN films".Science Bulletin 65.10(2020).