气候变化领域集成服务门户(CCPortal): Tunable magnetism of a single-carbon vacancy in graphene

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DOI	10.1016/j.scib.2019.11.023
	Tunable magnetism of a single-carbon vacancy in graphene
	Zhang Y.; Gao F.; Gao S.; He L.
发表日期	2020
ISSN	20959273
起始页码	194
结束页码	200
卷号	65 期号:3
英文摘要	Creating a single-carbon vacancy introduces (quasi-)localized states for both σ and π electrons in graphene. Theoretically, interactions between the localized σ electrons and quasilocalized π electrons of a single-carbon vacancy in graphene are predicted to control its magnetism. However, experimentally confirming this prediction through manipulating the interactions remains an outstanding challenge. Here we report the manipulation of magnetism in the vicinity of an individual single-carbon vacancy in graphene by using a scanning tunnelling microscopy (STM) tip. Our spin-polarized STM measurements, complemented by density functional theory calculations, indicate that the interactions between the localized σ and quasilocalized π electrons could split the π electrons into two states with opposite spins even when they are well above the Fermi level. Via the STM tip, we successfully manipulate both the magnitude and direction of magnetic moment of the π electrons with respect to that of the σ electrons. Three different magnetic states of the single-carbon vacancy, exhibiting magnetic moments of about 1.6 μB, 0.5 μB, and 0 μB respectively, are realized in our experiment. © 2019 Science China Press
关键词	Graphene Magnetic moment Scanning tunnelling microscopy Single-carbon vacancy Tunable magnetism
英文关键词	Density functional theory; Electrons; Magnetic moments; Scanning tunneling microscopy; Carbon vacancy; Localized state; Magnetic state; Spin-polarized STM; Two-state; Graphene
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207308
作者单位	Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China; Computational Science Research Center, ZPark II, Beijing, 100193, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
推荐引用方式 GB/T 7714	Zhang Y.,Gao F.,Gao S.,et al. Tunable magnetism of a single-carbon vacancy in graphene[J],2020,65(3).
APA	Zhang Y.,Gao F.,Gao S.,&He L..(2020).Tunable magnetism of a single-carbon vacancy in graphene.Science Bulletin,65(3).
MLA	Zhang Y.,et al."Tunable magnetism of a single-carbon vacancy in graphene".Science Bulletin 65.3(2020).