气候变化领域集成服务门户(CCPortal): Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters

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DOI	10.1016/j.scib.2020.06.033
	Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters
	Sun X.; Zhu C.; Liu H.; Zheng B.; Liu Y.; Yi J.; Fang L.; Liu Y.; Wang X.; Zubair M.; Zhu X.; Wang X.; Li D.; Pan A.
发表日期	2020
ISSN	20959273
起始页码	2007
结束页码	2013
卷号	65 期号:23
英文摘要	The newly emerged two-dimensional (2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductor-based field-effect transistors (FETs) has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier (SB) at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET (RFET) devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing (SS) values (132 mV/decade for MoTe2 RFET and 67 mV/decade for WSe2 RFET) and the relatively high mobility (28.6 cm2/(V s) for MoTe2 RFET and 89.8 cm2/(V s) for WSe2 RFET). Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe2 inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits. © 2020 Science China Press
关键词	Complementary inverter Reconfigurable field-effect transistor (FET)Schottky barrier Subthreshold swing
英文关键词	Electric inverters; Field effect transistors; Schottky barrier diodes; Semiconductor doping; Complementary inverters; Field effect transistor (FETs); Metal semiconductor interface; Operation conditions; Optical and electrical properties; Semiconducting materials; Sub-threshold swing(ss); Two Dimensional (2 D); Selenium compounds
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207187
作者单位	Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
推荐引用方式 GB/T 7714	Sun X.,Zhu C.,Liu H.,et al. Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters[J],2020,65(23).
APA	Sun X..,Zhu C..,Liu H..,Zheng B..,Liu Y..,...&Pan A..(2020).Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters.Science Bulletin,65(23).
MLA	Sun X.,et al."Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters".Science Bulletin 65.23(2020).