气候变化领域集成服务门户(CCPortal): Electronic origin of the enhanced thermoelectric efficiency of Cu2Se

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DOI	10.1016/j.scib.2020.07.007
	Electronic origin of the enhanced thermoelectric efficiency of Cu2Se
	Sun S.; Li Y.; Chen Y.; Xu X.; Kang L.; Zhou J.; Xia W.; Liu S.; Wang M.; Jiang J.; Liang A.; Pei D.; Zhao K.; Qiu P.; Shi X.; Chen L.; Guo Y.; Wang Z.; Zhang Y.; Liu Z.; Yang L.; Chen Y.
发表日期	2020
ISSN	20959273
起始页码	1888
结束页码	1893
卷号	65 期号:22
英文摘要	Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of ~3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials. © 2020 Science China Press
关键词	Angle-resolved photoemission spectroscopy Band reconstruction Cu2Se Seebeck coefficient Thermoelectric materials
英文关键词	Binding energy; Bridges; Copper metallography; Electronic structure; Energy policy; Heavy ions; Photoelectron spectroscopy; Selenium compounds; Thermoelectric equipment; Thermoelectricity; Waste heat; Condensed matter system; High-resolution angle-resolved photoemission spectroscopies; Structural phase transition; Thermo-Electric materials; Thermoelectric efficiency; Thermoelectric figure of merit; Thermoelectric performance; Thermoelectric properties; Copper compounds
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207185
作者单位	State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China; Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU, United Kingdom; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China; State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China; International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China; ShanghaiTech Laboratory for Topological Physics, Shanghai, 200031, China; Frontier Science Center for Quantum Information, Beijing, 100084, China
推荐引用方式 GB/T 7714	Sun S.,Li Y.,Chen Y.,et al. Electronic origin of the enhanced thermoelectric efficiency of Cu2Se[J],2020,65(22).
APA	Sun S..,Li Y..,Chen Y..,Xu X..,Kang L..,...&Chen Y..(2020).Electronic origin of the enhanced thermoelectric efficiency of Cu2Se.Science Bulletin,65(22).
MLA	Sun S.,et al."Electronic origin of the enhanced thermoelectric efficiency of Cu2Se".Science Bulletin 65.22(2020).