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DOI	10.1016/j.scib.2020.05.027
	Adjustment of oxygen vacancy states in ZnO and its application in ppb-level NO2 gas sensor
	Li G.; Zhang H.; Meng L.; Sun Z.; Chen Z.; Huang X.; Qin Y.
发表日期	2020
ISSN	20959273
起始页码	1650
结束页码	1658
卷号	65 期号:19
英文摘要	Oxygen vacancy (VO) is long believed as a key factor influencing the gas sensing properties. However, the concentration of VO is generally focused while the VO state is neglected, which masks the inherent mechanism of gas sensor. Using a post annealing process, the influence of VO states on the response of ZnO nanofilm to NO2 gas is investigated in this study. The systematical analysis of the results obtained by different methods indicates a transformation of VO from the neutral to the doubly ionized state during post annealing treatment. The results also imply that the gas sensing properties is not directly correlated with the VO concentration. And due to the competitive adsorption of ambient O2, the neutral VO is majorly occupied by the adsorbed O2 while the VO in doubly ionized state can promote the adsorption of NO2. Consequently, the transition of VO from the neutral to the doubly ionized state can lead to a dramatic increase of the response to NO2, from 733 to 3.34 × 104 for 100 ppm NO2. Guided by this mechanism, NO2 gas sensing in ppb-level is also achieved: the response reaches 165% to 25 ppb (0.025 ppm) NO2 with a good repeatability. © 2020 Science China Press
关键词	Adsorption Gas sensor Oxygen vacancy states Sensing mechanism
英文关键词	Annealing; Chemical detection; Gas detectors; Gases; II-VI semiconductors; Nitrogen oxides; Oxide minerals; Oxygen; Oxygen vacancies; Zinc oxide; Competitive adsorption; Gas sensing properties; Ionized state; ITS applications; NO2 gas sensor; Post annealing; Post annealing treatment; Systematical analysis; Ionization of gases
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207094
作者单位	Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
推荐引用方式 GB/T 7714	Li G.,Zhang H.,Meng L.,et al. Adjustment of oxygen vacancy states in ZnO and its application in ppb-level NO2 gas sensor[J],2020,65(19).
APA	Li G..,Zhang H..,Meng L..,Sun Z..,Chen Z..,...&Qin Y..(2020).Adjustment of oxygen vacancy states in ZnO and its application in ppb-level NO2 gas sensor.Science Bulletin,65(19).
MLA	Li G.,et al."Adjustment of oxygen vacancy states in ZnO and its application in ppb-level NO2 gas sensor".Science Bulletin 65.19(2020).