气候变化领域集成服务门户(CCPortal): Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits

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DOI	10.1016/j.scib.2019.12.018
	Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits
	Li D.; Zhu C.; Liu H.; Sun X.; Zheng B.; Liu Y.; Liu Y.; Wang X.; Zhu X.; Wang X.; Pan A.
发表日期	2020
ISSN	20959273
起始页码	293
结束页码	299
卷号	65 期号:4
英文摘要	The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection circuits. In this work, it reveals that light illumination can induce the formation of p-n junctions along two-dimensional conduction channels. The results indicate that the dominant charge carrier type and density in black phosphorus (BP) conduction channel can be effectively modulated by the underlying cadmium sulfide (CdS) photo-gate layer under light illumination. This enables flexible switching of the working state between BP resistor and BP p-n diode in the designed semi-photo-gate transistor (SPGT) devices when switching the light on and off (ultra-low threshold light power). Simultaneously, the achieved BP p-n junctions also exhibit ultra-high photoresponsivity and evident photovoltaic properties. That is to say, light can be employed as external stimulus to define the BP p-n junctions, and in turn the p-n junctions will further convert the light into electrical power, showing all-in-one opto-electrical interconnection properties. Moreover, the SPGT device architecture is also applicable for construction of other ambipolar semiconductor-based (WSe2- and MoTe2-based) p-n diodes. Such universal all-in-one light-triggered lateral homogeneous p-n junctions with ultra-low energy consumption should open a new pathway toward novel optoelectronic devices and deliver various new applications. © 2019 Science China Press
关键词	Light-triggered device Opto-electrical interconnection circuits p-n diodes Two-dimensional materials
英文关键词	Cadmium sulfide; Electric network parameters; Energy utilization; II-VI semiconductors; Optoelectronic devices; Semiconductor diodes; Semiconductor junctions; Sulfur compounds; Timing circuits; Trigger circuits; Ambipolar semiconductor; Charge carrier types; Device architectures; Electrical interconnections; P-n Diode; Photovoltaic property; Two-dimensional conduction; Two-dimensional materials; Electric power system interconnection
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207091
作者单位	Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
推荐引用方式 GB/T 7714	Li D.,Zhu C.,Liu H.,et al. Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits[J],2020,65(4).
APA	Li D..,Zhu C..,Liu H..,Sun X..,Zheng B..,...&Pan A..(2020).Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits.Science Bulletin,65(4).
MLA	Li D.,et al."Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits".Science Bulletin 65.4(2020).