气候变化领域集成服务门户(CCPortal): Insights into interface and bulk defects in a high efficiency kesterite-based device

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DOI	10.1039/d0ee02004d
	Insights into interface and bulk defects in a high efficiency kesterite-based device
	Fonoll-Rubio R.; Andrade-Arvizu J.; Blanco-Portals J.; Becerril-Romero I.; Guc M.; Saucedo E.; Peiró F.; Calvo-Barrio L.; Ritzer M.; Schnohr C.S.; Placidi M.; Estradé S.; Izquierdo-Roca V.; Pérez-Rodríguez A.
发表日期	2021
ISSN	17545692
起始页码	507
结束页码	523
卷号	14 期号:1
英文摘要	This work provides a detailed analysis of a high efficiency Cu2ZnSnSe4 device using a combination of advanced electron microscopy and spectroscopy techniques. In particular, a full picture of the different defects present at the interfaces of the device and in the bulk of the absorber is achieved through the combination of high resolution electron microscopy techniques with Raman, X-ray fluorescence and Auger spectroscopy measurements at the macro, micro and nano scales. The simultaneous investigation of the bulk and the interfaces allows assessing the impact of the defects found in each part of the device on its performance. Despite a good crystalline quality and homogeneous composition in the bulk, this work reports, for the first time, direct evidence of twinning defects in the bulk, of micro and nano-voids at the back interface and of grain-to-grain non-uniformities and dislocation defects at the front interface. These, together with other issues observed such as strong absorber thickness variations and a bilayer structure with small grains at the bottom, are shown to be the main factors limiting the performance of CZTSe devices. These results open the way to the identification of new solutions to further developing the kesterite technology and pushing it towards higher performances. Moreover, this study provides an example of how the advanced characterization of emergent multilayer-based devices can be employed to elucidate their main limitations. © The Royal Society of Chemistry.
英文关键词	Copper compounds; Efficiency; Electron microscopes; High resolution electron microscopy; Selenium compounds; Tin compounds; Zinc compounds; Absorber thickness; Auger spectroscopy; Bi-layer structure; Crystalline quality; Dislocation defects; Homogeneous composition; Non-uniformities; X ray fluorescence; Defects; energy efficiency; equipment; kesterite; limiting factor; performance assessment
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190817
作者单位	Catalonia Institute for Energy Research-IREC Sant Adrià de Besòs, Barcelona, 08930, Spain; LENS-MIND, Departament d'Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Barcelona, 08028, Spain; Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, Barcelona, 08028, Spain; Photovoltaic Group, Electronic Engineering Department, Universitat Polytècnica de Catalunya (UPC), Barcelona, 08034, Spain; Centres Científics i Tecnològics (CCiTUB), Universitat de Barcelona C/Lluis Solé i Sabaris, Barcelona, 08028, Spain; Departament d'Enginyeria Electrònica i Biomèdica, Inub, Universitat de Barcelona, C/Martí i Franqués 1, Barcelona, 08028, Spain; Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, Jena, 07743, Germany; Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, Leipzig, 04103, Germany
推荐引用方式 GB/T 7714	Fonoll-Rubio R.,Andrade-Arvizu J.,Blanco-Portals J.,et al. Insights into interface and bulk defects in a high efficiency kesterite-based device[J],2021,14(1).
APA	Fonoll-Rubio R..,Andrade-Arvizu J..,Blanco-Portals J..,Becerril-Romero I..,Guc M..,...&Pérez-Rodríguez A..(2021).Insights into interface and bulk defects in a high efficiency kesterite-based device.Energy & Environmental Science,14(1).
MLA	Fonoll-Rubio R.,et al."Insights into interface and bulk defects in a high efficiency kesterite-based device".Energy & Environmental Science 14.1(2021).