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DOI | 10.1039/d0ee03312j |
Spontaneous interface engineering for dopant-free poly(3-hexylthiophene) perovskite solar cells with efficiency over 24% | |
Jeong M.J.; Yeom K.M.; Kim S.J.; Jung E.H.; Noh J.H. | |
发表日期 | 2021 |
ISSN | 17545692 |
起始页码 | 2419 |
结束页码 | 2428 |
卷号 | 14期号:4 |
英文摘要 | Halide perovskite solar cells (PSCs) have recently shown a leap forward in performance by reducing the recombination loss at the interface between the perovskite and hole-transporting layers through surface treatment. However, additional surface treatment processes such as spin-coating or annealing are undesirable for commercialization in terms of the production cost. In addition, commonly used organic hole-transporting materials (HTMs) such as 2,2′,7,7′-tetrakis[N,N-di(4methoxylphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD) and poly(triarylamine) (PTAA) are used with hygroscopic additives, which deteriorate the long-term stability and hinder the commercialization of PSCs. Herein, we report an efficient strategy for interface engineering by directly incorporating gallium(iii) acetylacetonate (Ga(acac)3) into HTMs without subsequent processes and hygroscopic dopants. The incorporated Ga(acac)3 spontaneously interacts with the surface of the perovskite layer, yielding a reduction of the interfacial recombination loss for various organic HTMs. In particular, by applying Ga(acac)3 in poly(3-hexylthiophene) (P3HT), the PSCs showed a significant improvement in the power conversion efficiency (PCE) from 17.7% for the control device to 21.8%. The Ga(acac)3-devices also showed superior moisture stability for 2000 hours under 85% relative humidity at room temperature without any encapsulation, maintaining a complete initial performance. We also demonstrated that the incorporated Ga(acac)3 successfully works on the best-known PSCs with the aligned P3HT, showing an enhanced PCE of 24.6%. We believe that this work presents a route for the high performance and commercialization of PSCs. This journal is © The Royal Society of Chemistry. |
英文关键词 | Additives; Cell engineering; Conversion efficiency; Costs; Efficiency; Perovskite; Perovskite solar cells; Surface treatment; Efficient strategy; Hole transporting layers; Interface engineering; Long term stability; Moisture stability; Organic hole transporting materials; Poly (3-hexylthiophene); Power conversion efficiencies; Gallium compounds; chemical compound; energy efficiency; engineering; fuel cell; interface; perovskite |
语种 | 英语 |
来源期刊 | Energy & Environmental Science |
文献类型 | 期刊论文 |
条目标识符 | http://gcip.llas.ac.cn/handle/2XKMVOVA/190703 |
作者单位 | School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, 02841, South Korea; Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 3G4, Canada; KU-KIST Green School Graduate, School of Energy and Environment, Korea University, Seoul, 02841, South Korea |
推荐引用方式 GB/T 7714 | Jeong M.J.,Yeom K.M.,Kim S.J.,et al. Spontaneous interface engineering for dopant-free poly(3-hexylthiophene) perovskite solar cells with efficiency over 24%[J],2021,14(4). |
APA | Jeong M.J.,Yeom K.M.,Kim S.J.,Jung E.H.,&Noh J.H..(2021).Spontaneous interface engineering for dopant-free poly(3-hexylthiophene) perovskite solar cells with efficiency over 24%.Energy & Environmental Science,14(4). |
MLA | Jeong M.J.,et al."Spontaneous interface engineering for dopant-free poly(3-hexylthiophene) perovskite solar cells with efficiency over 24%".Energy & Environmental Science 14.4(2021). |
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