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DOI	10.1039/d1ee00923k
	Highly efficient transverse thermoelectric devices with Re4Si7crystals
	Scudder M.R.; He B.; Wang Y.; Rai A.; Cahill D.G.; Windl W.; Heremans J.P.; Goldberger J.E.
发表日期	2021
ISSN	17545692
起始页码	4009
结束页码	4017
卷号	14 期号:7
英文摘要	The principal challenges in current thermoelectric power generation modules are the availability of stable, diffusion-resistant, lossless electrical and thermal metal-semiconductor contacts that do not degrade at the hot end nor cause reductions in device efficiency. Transverse thermoelectric devices, in which a thermal gradient in a single material induces a perpendicular voltage, promise to overcome these problems. However, the measured material transverse thermoelectric efficiencies, zxyT, of nearly all materials to date has been far too low to confirm these advantages in an actual device. Here, we show that single crystals of Re4Si7, an air-stable, thermally robust, layered compound, have a transverse zxyT of 0.7 ± 0.15 at 980 K, a value that is on par with existing commercial longitudinal theremoelectrics today. Through constructing and characterizing a transverse power generation module, we prove that extrinsic losses through contact resistances are minimized in this geometry, and that no electrical contacts are needed at the hot side. This excellent transverse thermoelectric performance arises from the large, oppositely signed in-plane p-type and cross-plane n-type thermopowers. These large anisotropic thermopowers arise from thermal population of the highly anisotropic valence band and isotropic conduction band in this narrow gap semiconductor. Overall, this work establishes Re4Si7 as the "gold-standard"of transverse thermoelectrics, allowing future exploration of unique device architectures for waste heat recovery. © The Royal Society of Chemistry.
英文关键词	Anisotropy; Efficiency; Narrow band gap semiconductors; Rhenium compounds; Semiconducting silicon compounds; Silicon; Thermoelectric power; Thermoelectricity; Waste heat; Waste heat utilization; Device architectures; Electrical contacts; Metal-semiconductor contacts; Narrow-gap semiconductors; Thermal population; Thermoelectric devices; Thermoelectric efficiency; Thermoelectric performance; Thermoelectric energy conversion; energy efficiency; equipment; exploration; power generation
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190606
作者单位	Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH 43210, United States; Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210, United States; Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43210, United States; Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States; Department of Physics, The Ohio State University, Columbus, OH 43210, United States
推荐引用方式 GB/T 7714	Scudder M.R.,He B.,Wang Y.,et al. Highly efficient transverse thermoelectric devices with Re4Si7crystals[J],2021,14(7).
APA	Scudder M.R..,He B..,Wang Y..,Rai A..,Cahill D.G..,...&Goldberger J.E..(2021).Highly efficient transverse thermoelectric devices with Re4Si7crystals.Energy & Environmental Science,14(7).
MLA	Scudder M.R.,et al."Highly efficient transverse thermoelectric devices with Re4Si7crystals".Energy & Environmental Science 14.7(2021).