气候变化领域集成服务门户(CCPortal): Identifying and suppressing interfacial recombination to achieve high open-circuit voltage in perovskite solar cells

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DOI	10.1039/c7ee00421d
	Identifying and suppressing interfacial recombination to achieve high open-circuit voltage in perovskite solar cells
	Correa-Baena J.-P.; Tress W.; Domanski K.; Anaraki E.H.; Turren-Cruz S.-H.; Roose B.; Boix P.P.; Grätzel M.; Saliba M.; Abate A.; Hagfeldt A.
发表日期	2017
ISSN	17545692
起始页码	1207
结束页码	1212
卷号	10 期号:5
英文摘要	With close to 100% internal quantum efficiency over the absorption spectrum, photocurrents in perovskite solar cells (PSCs) are at their practical limits. It is therefore imperative to improve open-circuit voltages (VOC) in order to go beyond the current 100 mV loss-in-potential. Identifying and suppressing recombination bottlenecks in the device stack will ultimately drive the voltages up. In this work, we investigate in depth the recombination at the different interfaces in a PSC, including the charge selective contacts and the effect of grain boundaries. We find that the density of grain boundaries and the use of tunneling layers in a highly efficient PSC do not modify the recombination dynamics at 1 sun illumination. Instead, the recombination is strongly dominated by the dopants in the hole transporting material (HTM), spiro-OMeTAD and PTAA. The reduction of doping concentrations for spiro-OMeTAD yielded VOC's as high as 1.23 V in contrast to PTAA, which systematically showed slightly lower voltages. This work shows that a further suppression of non-radiative recombination is possible for an all-low-temperature PSC, to yield a very low loss-in-potential similar to GaAs, and thus paving the way towards higher than 22% efficiencies. © 2017 The Royal Society of Chemistry.
英文关键词	Absorption spectroscopy; Contacts (fluid mechanics); Efficiency; Gallium arsenide; Grain boundaries; III-V semiconductors; Open circuit voltage; Perovskite; Perovskite solar cells; Temperature; Timing circuits; Charge selective; Doping concentration; Hole-transporting materials; Internal quantum efficiency; Low temperatures; Non-radiative recombinations; Recombination dynamics; Sun illumination; Solar cells; absorption; concentration (composition); energy efficiency; equipment; low temperature; perovskite; quantum mechanics
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190562
作者单位	Laboratory of Photomolecular Science, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland; Laboratory for Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland; Department of Materials Engineering, Isfahan University of Technology, Isfahan, 84156-83111, Iran; Adolphe Merkle Institute, Chemin des Verdiers 4, Fribourg, CH-1700, Switzerland; Energy Research Institute at Nanyang Technological University (ERIN), 50 Nanyang Drive, Singapore, 637553, Singapore; Benemérita Universidad Autónoma de Puebla, Puebla, 7200, Mexico; Massachusetts Institute of Technology, Cambridge, MA 02139, United States
推荐引用方式 GB/T 7714	Correa-Baena J.-P.,Tress W.,Domanski K.,et al. Identifying and suppressing interfacial recombination to achieve high open-circuit voltage in perovskite solar cells[J],2017,10(5).
APA	Correa-Baena J.-P..,Tress W..,Domanski K..,Anaraki E.H..,Turren-Cruz S.-H..,...&Hagfeldt A..(2017).Identifying and suppressing interfacial recombination to achieve high open-circuit voltage in perovskite solar cells.Energy & Environmental Science,10(5).
MLA	Correa-Baena J.-P.,et al."Identifying and suppressing interfacial recombination to achieve high open-circuit voltage in perovskite solar cells".Energy & Environmental Science 10.5(2017).