气候变化领域集成服务门户(CCPortal): Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy

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DOI	10.1039/c7ee00303j
	Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy
	Heo S.; Seo G.; Lee Y.; Lee D.; Seol M.; Lee J.; Park J.-B.; Kim K.; Yun D.-J.; Kim Y.S.; Shin J.K.; Ahn T.K.; Nazeeruddin M.K.
发表日期	2017
ISSN	17545692
起始页码	1128
结束页码	1133
卷号	10 期号:5
英文摘要	We report the presence of defects in CH3NH3PbI3, which is one of the main factors that deteriorates the performance of perovskite solar cells. Although the efficiency of the perovskite solar cells has been improved by curing defects using various methods, deeply trapped defects in the perovskite layer have not been systematically studied, and their function is still unclear. The comparison and analysis of defects in differently prepared perovskite solar cells reveals that both solar cells have two kinds of deep level defects (E1 and E2). In the one-pot solution processed solar cell, the defect state E1 is dominant, while E2 is the major defect in the solar cell prepared using the cuboid method. Since the energy level of E1 is higher than that of E2, the cuboid solar cell shows higher open-circuit voltage and efficiency. © 2017 The Royal Society of Chemistry.
英文关键词	Deep level transient spectroscopy; Defects; Open circuit voltage; Perovskite; Perovskite solar cells; Comparison and analysis; Deep-level defects; Defect analysis; Defect state; One pot; Perovskite layers; Solution-processed; Solar cells; ammonium; electrochemical method; energy efficiency; fuel cell; lead; methane; performance assessment; perovskite; spectroscopy
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190554
作者单位	Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si Gyeonggi-do, 16678, South Korea; Department of Energy Science, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, 16419, South Korea; Group for Molecular Engineering of Functional Materials, EPFL Valais Wallis, Sion, CH-1951, Switzerland; Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si Gyeonggi-do, 16678, South Korea
推荐引用方式 GB/T 7714	Heo S.,Seo G.,Lee Y.,et al. Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy[J],2017,10(5).
APA	Heo S..,Seo G..,Lee Y..,Lee D..,Seol M..,...&Nazeeruddin M.K..(2017).Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy.Energy & Environmental Science,10(5).
MLA	Heo S.,et al."Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy".Energy & Environmental Science 10.5(2017).