气候变化领域集成服务门户(CCPortal): Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se

CCPortal

DOI	10.1039/c7ee01193h
	Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se
	Olvera A.A.; Moroz N.A.; Sahoo P.; Ren P.; Bailey T.P.; Page A.A.; Uher C.; Poudeu P.F.P.
发表日期	2017
ISSN	17545692
起始页码	1668
结束页码	1676
卷号	10 期号:7
英文摘要	High thermoelectric figure of merit, ZT ∼ 2.1 at 1000 K, have been reported in Cu2-xSe-based materials. However, their deployments in operational devices have been hampered by chemical instability and low average ZT (ZTave) values. Here, we demonstrate improved chemical stability and a record high ZTave ∼ 1.5 over a broad temperature range (T ≤ 850 K) in Cu2Se/CuInSe2 nanocomposites, with ZT values ranging from 0.6 at 450 K to an unprecedentedly large value of 2.6 at 850 K for the sample with 1 mol% In. This remarkable performance is attributed to the localization of Cu+ ions induced by the incorporation of In into the Cu2Se lattice, which simultaneously boost the electrical conductivity and reduce the thermal conductivity of the nanocomposites. These findings pave the way for large-scale utilization of Cu2Se-based materials in thermoelectric generators. © The Royal Society of Chemistry 2017.
英文关键词	Indium; Nanocomposites; Thermal conductivity; Thermoelectric equipment; Broad temperature ranges; Chemical instability; Electrical conductivity; Scale utilization; Thermoelectric figure of merit; Thermoelectric generators; Chemical stability; chemical property; composite; electrical conductivity; electronic equipment; indium; inorganic compound; nanoparticle; solubility; thermal conductivity; thermodynamics
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190458
作者单位	Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, United States; Department of Physics, University of Michigan, Ann Arbor, MI 48109, United States
推荐引用方式 GB/T 7714	Olvera A.A.,Moroz N.A.,Sahoo P.,et al. Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se[J],2017,10(7).
APA	Olvera A.A..,Moroz N.A..,Sahoo P..,Ren P..,Bailey T.P..,...&Poudeu P.F.P..(2017).Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se.Energy & Environmental Science,10(7).
MLA	Olvera A.A.,et al."Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se".Energy & Environmental Science 10.7(2017).