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DOI | 10.1039/c7ee01981e |
Origin of low electron-hole recombination rate in metal halide perovskites | |
Ambrosio F.; Wiktor J.; De Angelis F.; Pasquarello A. | |
发表日期 | 2018 |
ISSN | 17545692 |
起始页码 | 101 |
结束页码 | 105 |
卷号 | 11期号:1 |
英文摘要 | To address the slow recombination of photogenerated charges in tetragonal CH3NH3PbI3, the evolution of extra electrons and holes is simulated through advanced ab initio molecular dynamics. We show that the localization of the charge carriers and their hopping from one polaronic state to another occur on a subpicosecond time scale. The localization, attended by weak bond contractions and elongations in the inorganic sublattice, is induced by thermal vibrations and only moderately perturbed by the disordered field generated by the organic cations. The simultaneous simulation of extra electrons and holes shows that they preferentially localize in spatially distinct regions. As determined by the overlap between the electron and hole wave functions, the probability of radiative bimolecular recombination is lowered by two orders of magnitude compared with that of optical generation. The separate polaronic localization of electrons and holes emerges as the key feature for achieving exceptional photovoltaic properties. © The Royal Society of Chemistry. |
英文关键词 | Metal halides; Molecular dynamics; Wave functions; Ab initio molecular dynamics; Bimolecular recombination; Electron hole recombination rate; Electrons and holes; Orders of magnitude; Photogenerated charge; Photovoltaic property; Subpicosecond time scale; Electrons; electron; halide; magnitude; perovskite; photovoltaic system; probability; simulation; timescale |
语种 | 英语 |
来源期刊 | Energy & Environmental Science |
文献类型 | 期刊论文 |
条目标识符 | http://gcip.llas.ac.cn/handle/2XKMVOVA/190339 |
作者单位 | Simulation À l'Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland; Computational Laboratory for Hybrid/Organic Photovoltaics (CLHYO), CNR-ISTM, Via Elce di Sotto 8, Perugia, I-06123, Italy; D3-Computation, Istituto Italiano di Tencologia, Via Morego 30, Genova, Italy |
推荐引用方式 GB/T 7714 | Ambrosio F.,Wiktor J.,De Angelis F.,et al. Origin of low electron-hole recombination rate in metal halide perovskites[J],2018,11(1). |
APA | Ambrosio F.,Wiktor J.,De Angelis F.,&Pasquarello A..(2018).Origin of low electron-hole recombination rate in metal halide perovskites.Energy & Environmental Science,11(1). |
MLA | Ambrosio F.,et al."Origin of low electron-hole recombination rate in metal halide perovskites".Energy & Environmental Science 11.1(2018). |
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