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DOI	10.1039/c8ee00290h
	High thermoelectric performance in Bi0.46Sb1.54Te3 nanostructured with ZnTe
	Deng R.; Su X.; Hao S.; Zheng Z.; Zhang M.; Xie H.; Liu W.; Yan Y.; Wolverton C.; Uher C.; Kanatzidis M.G.; Tang X.
发表日期	2018
ISSN	17545692
起始页码	1520
结束页码	1535
卷号	11 期号:6
英文摘要	Defect engineering and nano-structuring are the core stratagems for improving thermoelectric properties. In bismuth telluride alloys nanosizing individual crystallites has been extensively studied in efforts to reduce the thermal conductivity, but nanostructuring with second phases has been more challenging. In this study, we demonstrate a thermoelectric figure of merit ZT of 1.4 at 400 K, realized in Zn-containing BiSbTe alloys (specifically Bi0.46Sb1.54Te3) by integrating defect complexity with nanostructuring. We have succeeded in creating nanostructured BiSbTe alloys containing ZnTe nanoprecipitates. We present a melt-spinning-based synthesis that forms in situ ZnTe nanoprecipitates to produce an extremely low lattice thermal conductivity of ∼0.35 W m-1 K-1 at 400 K, approaching the amorphous limit in the Bi2-xSbxTe3 system, while preserving the high power factor of Bi0.46Sb1.54Te3. These samples show excellent repeatability and thermal stability at temperatures up to 523 K. DFT calculations and experimental results show that Zn is inclined to form dual site defects, including two substitutional defects ZnBi/Sb′ and a Te vacancy, to achieve full charge compensation, which was further explicitly corroborated by Positron annihilation measurement. The strong enhancement of thermoelectric properties was validated in a thermoelectric module fabricated with the melt-spun p-legs (ZnTe-nanostructured BiSbTe) and zone-melt n-legs (conventional BiTeSe) which achieved a thermoelectric conversion efficiency of 5.0% when subjected to a temperature gradient of 250 K, representing about 40% improvement compared with a commercial zone-melt-based module. The results presented here represent a significant step forward for applications in thermoelectric power generation. © 2018 The Royal Society of Chemistry.
英文关键词	Bismuth compounds; II-VI semiconductors; Indium compounds; Melt spinning; Metallurgy; Precipitation (chemical); Selenium compounds; Thermal conductivity of solids; Thermoelectric equipment; Thermoelectric power; Thermoelectricity; Zinc alloys; Zone melting; Lattice thermal conductivity; Positron annihilation measurements; Substitutional defects; Thermo-electric modules; Thermoelectric conversion efficiency; Thermoelectric figure of merit; Thermoelectric performance; Thermoelectric properties; Bismuth alloys; alloy; antimony; bismuth; performance assessment; tellurium; temperature gradient; thermal conductivity; thermochemistry; zinc
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190224
作者单位	State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China; Department of Chemistry, Northwestern University, Evanston, IL 60208, United States; Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States; Department of Physics, University of Michigan, Ann Arbor, MI 48109, United States
推荐引用方式 GB/T 7714	Deng R.,Su X.,Hao S.,et al. High thermoelectric performance in Bi0.46Sb1.54Te3 nanostructured with ZnTe[J],2018,11(6).
APA	Deng R..,Su X..,Hao S..,Zheng Z..,Zhang M..,...&Tang X..(2018).High thermoelectric performance in Bi0.46Sb1.54Te3 nanostructured with ZnTe.Energy & Environmental Science,11(6).
MLA	Deng R.,et al."High thermoelectric performance in Bi0.46Sb1.54Te3 nanostructured with ZnTe".Energy & Environmental Science 11.6(2018).