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DOI10.1039/c8ee03162b
Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn 1-: X Ge x Te
Banik A.; Ghosh T.; Arora R.; Dutta M.; Pandey J.; Acharya S.; Soni A.; Waghmare U.V.; Biswas K.
发表日期2019
ISSN17545692
起始页码589
结束页码595
卷号12期号:2
英文摘要High thermoelectric performance of a crystalline solid requires it to have low thermal conductivity which is one of the utmost material challenges. Herein, we demonstrate how the local structural distortions and the associated ferroelectric lattice instability induced soft polar phonons effectively scatter the heat carrying acoustic phonons and help achieve ultralow lattice thermal conductivity in SnTe by engineering the instability near room temperature via Ge (x = 0-30 mol%) alloying. While Sn 1-x Ge x Te possesses a global cubic structure above room temperature (x < 0.5), by analysing synchrotron X-ray pair distribution functions (PDFs) we showed that local rhombohedral distortion exists which is sustained up to the studied maximum temperature (∼600 K) above the ferroelectric transition (T C = 290 K). We showed that the local rhombohedral distortions in global cubic Sn 1-x Ge x Te are predominantly associated with local Ge off-centering which forms a short-range chain-like structure and scatters acoustic phonons, resulting in an ultralow lattice thermal conductivity of ∼0.67 W m -1 K -1 . In addition, Sb doping in Sn 1-x Ge x Te enhances the Seebeck coefficient due to p-type carrier optimization and valence band convergence, which leads to a synergistic boost in the thermoelectric figure of merit, zT, to ∼1.6 at 721 K. The concept of engineering ferroelectric instability to achieve ultralow thermal conductivity is applicable to other crystalline solids, which opens up a general opportunity to enhance the thermoelectric performance. © 2019 The Royal Society of Chemistry.
英文关键词Coefficient of performance; Crystal lattices; Crystalline materials; Distribution functions; Electromagnetic wave emission; Ferroelectricity; Germanium; IV-VI semiconductors; Phonons; Stability; Thermal conductivity of solids; Thermoelectricity; Tin alloys; Tin compounds; Ferroelectric instability; Ferroelectric transition; Lattice thermal conductivity; Low thermal conductivity; Pair distribution functions; Rhombohedral distortion; Thermoelectric figure of merit; Thermoelectric performance; Thermal Engineering; crystallinity; electrical method; energy efficiency; engineering; heat capacity; instability; iron; optimization; phase transition; temperature profile; thermal conductivity
语种英语
来源期刊Energy & Environmental Science
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/189978
作者单位New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore, 560064, India; Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore, 560064, India; School of Basic Sciences, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, 175005, India; School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore, 560064, India
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Banik A.,Ghosh T.,Arora R.,et al. Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn 1-: X Ge x Te[J],2019,12(2).
APA Banik A..,Ghosh T..,Arora R..,Dutta M..,Pandey J..,...&Biswas K..(2019).Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn 1-: X Ge x Te.Energy & Environmental Science,12(2).
MLA Banik A.,et al."Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn 1-: X Ge x Te".Energy & Environmental Science 12.2(2019).
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