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DOI10.1039/c9ee00317g
Medium-temperature thermoelectric GeTe: Vacancy suppression and band structure engineering leading to high performance
Dong J.; Sun F.-H.; Tang H.; Pei J.; Zhuang H.-L.; Hu H.-H.; Zhang B.-P.; Pan Y.; Li J.-F.
发表日期2019
ISSN17545692
起始页码1396
结束页码1403
卷号12期号:4
英文摘要GeTe is a promising thermoelectric material at medium temperature, but its carrier concentration tends to go beyond the optimal range for thermoelectrics. This work realized a significant ZT enhancement from 1.0 to 2.0 by suppressing the formation of Ge vacancies and band convergence. By simply optimizing the amount of excessive Ge, the hole carrier concentration is greatly reduced. It is demonstrated that the suppression of Ge vacancies can not only optimize the carrier concentration but also recover the mobility to a high value of 90 cm2 V-1 s-1, which well exceeds the previously reported data and guarantees superior electrical transport properties, leading to a ZT of 1.6. Further Bi doping facilitates band convergence as featured by the increased band effective mass and high mobility, which in turn yields large power factors and low electronic thermal conductivity. Bi doping induced mass and strain fluctuation also favors the reduction of the lattice thermal conductivity. Consequently, a maximum ZT of ∼ 2.0 at 650 K with an average ZT of over 1.2 is achieved in the nominal composition Bi0.05Ge0.99Te, which is one of the best thermoelectric materials for medium temperature applications. © 2019 The Royal Society of Chemistry.
英文关键词Germanium; Germanium compounds; High temperature engineering; Hole concentration; Strain; Tellurium compounds; Thermoelectric equipment; Thermoelectricity; Band structure engineering; Electrical transport properties; Electronic thermal conductivity; Lattice thermal conductivity; Medium temperature; Nominal composition; Strain fluctuations; Thermo-Electric materials; Thermal conductivity; concentration (composition); engineering; optimization; performance assessment; temperature effect
语种英语
来源期刊Energy & Environmental Science
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/189926
作者单位State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China; Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China; Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, 01187, Germany
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Dong J.,Sun F.-H.,Tang H.,et al. Medium-temperature thermoelectric GeTe: Vacancy suppression and band structure engineering leading to high performance[J],2019,12(4).
APA Dong J..,Sun F.-H..,Tang H..,Pei J..,Zhuang H.-L..,...&Li J.-F..(2019).Medium-temperature thermoelectric GeTe: Vacancy suppression and band structure engineering leading to high performance.Energy & Environmental Science,12(4).
MLA Dong J.,et al."Medium-temperature thermoelectric GeTe: Vacancy suppression and band structure engineering leading to high performance".Energy & Environmental Science 12.4(2019).
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