气候变化领域集成服务门户(CCPortal): Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics

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DOI	10.1039/c9ee01773a
	Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics
	Noel N.K.; Habisreutinger S.N.; Pellaroque A.; Pulvirenti F.; Wenger B.; Zhang F.; Lin Y.-H.; Reid O.G.; Leisen J.; Zhang Y.; Barlow S.; Marder S.R.; Kahn A.; Snaith H.J.; Arnold C.B.; Rand B.P.
发表日期	2019
ISSN	17545692
起始页码	3063
结束页码	3073
卷号	12 期号:10
英文摘要	The remarkable optoelectronic properties of metal halide perovskites have generated intense research interest over the last few years. The ability to control and manipulate the crystallisation and stoichiometry of perovskite thin-films has allowed for impressive strides in the development of highly efficient perovskite solar cells. However, being able to effectively modify the interfaces of metal halide perovskites, and to controllably p- or n-type dope the surfaces, may be key to further improvements in the efficiency and long-term stability of these devices. In this study, we use surface doping of the mixed-cation, mixed-halide perovskite FA0.85MA0.15Pb(I0.85Br0.15)3 (FA-formamidinium; MA-methylammonium) to improve the hole extraction from the perovskite solar cell. By treating the surface of the perovskite film with a strongly oxidizing molybdenum tris(dithiolene) complex, we achieve a shift in the work function that is indicative of p-doping, and a twofold increase in the total conductivity throughout the film. We probe the associated interfacial chemistry through photoelectron and solid-state nuclear magnetic resonance spectroscopies and confirm that charge-transfer occurs between the perovskite and dopant complex. The resulting p-doped interface constitutes a homojunction with increased hole-selectivity. With charge-selective layers, we show that this surface doping enhances the device performance of perovskite solar cells resulting in steady-state efficiencies approaching 21%. Finally, we demonstrate that a surface treatment with this dopant produces the same effect as the commonly employed additive 4-tert butylpyridine (tBP), allowing us to achieve "tBP-free" devices with steady-state efficiencies of over 20%, and enhanced thermal stability as compared to devices processed using tBP. Our findings therefore demonstrate that molecular doping is a feasible route to tune and control the surface properties of metal halide perovskites. © 2019 The Royal Society of Chemistry.
英文关键词	Charge transfer; Efficiency; Metal halides; Metals; Nuclear magnetic resonance spectroscopy; Perovskite; Semiconductor doping; Solar control films; Surface treatment; Thin films; Device performance; Halide perovskites; Interfacial charge transfer; Long term stability; Optoelectronic properties; Perovskite thin films; Solid state nuclear magnetic resonance spectroscopy; Steady-state efficiency; Perovskite solar cells; additive; detection method; drag coefficient; efficiency measurement; equipment; fuel cell; halide; performance assessment; perovskite; photovoltaic system; stoichiometry
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/189804
作者单位	Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States; Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, NJ 08544, United States; National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, United States; Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom; School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400, United States; Renewable and Sustainable Energy Institute, University of Colorado at Boulder, Boulder, CO 80309, United States; Andlinger Center for Energy and the Environment, Princeton University, Princeton, NJ 08544, United States
推荐引用方式 GB/T 7714	Noel N.K.,Habisreutinger S.N.,Pellaroque A.,et al. Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics[J],2019,12(10).
APA	Noel N.K..,Habisreutinger S.N..,Pellaroque A..,Pulvirenti F..,Wenger B..,...&Rand B.P..(2019).Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics.Energy & Environmental Science,12(10).
MLA	Noel N.K.,et al."Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics".Energy & Environmental Science 12.10(2019).