气候变化领域集成服务门户(CCPortal): Bifacial passivation of: N -silicon metal-insulator-semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions

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DOI	10.1039/c9ee02766a
	Bifacial passivation of: N -silicon metal-insulator-semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions
	Liu B.; Feng S.; Yang L.; Li C.; Luo Z.; Wang T.; Gong J.
发表日期	2020
ISSN	17545692
起始页码	221
结束页码	228
卷号	13 期号:1
英文摘要	Silicon-based (Si-based) junctions have been widely investigated in recent years as photoelectrochemical (PEC) water splitting photoelectrodes, including buried junctions and metal-insulator-semiconductor (MIS) Schottky junctions. However, Si-based MIS photoelectrodes suffer from low performance for the PEC oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) because of the dilemma that a thin insulator cannot provide enough interfacial passivation while a thick insulator will block the transport of charge carriers. Another trade-off is the fact that the photovoltage extracted from the band offset between the metal and semiconductor will be counteracted by the parasitic light absorption of the metal layer, sacrificing the saturation photocurrent. This paper describes the design and realization of a bifacial passivation strategy for the metal/Si interface of an MIS photoelectrode, featuring a bi-layer stack consisting of amorphous silicon (a-Si) for passivating the silicon surface and a metal oxide (TiO2) for passivating the metal surface. Upon the bifacial passivation of both a-Si and TiO2, the minority carrier lifetime of the Si MIS photoanode was significantly improved from 18 to 2360 μs. Enabled by this extremely long minority carrier lifetime, it becomes possible to place the MIS junction on the back side of a Si substrate to construct an inverted-MIS (I-MIS) structure to eliminate the parasitic light absorption of traditional Si MIS photoelectrodes. The obtained photoelectrode exhibits an excellent onset potential of 0.85 V and 0.62 V vs. reversible hydrogen electrode (RHE) for the OER and HER, respectively. Eventually, unprecedented applied bias photon-to-current efficiencies (ABPE) of 3.91% and 12.66% were obtained by Si MIS and Si I-MIS, which are the highest among MIS-based photoanodes and photocathodes, with 30 h and 108h stable operation. When pairing the Si I-MIS photocathode with a BiVO4 photoanode to form a PEC membrane-free tandem cell, an unbiased solar-to-hydrogen conversion efficiency of 1.9% is achieved. © 2020 The Royal Society of Chemistry.
英文关键词	Amorphous silicon; Bismuth compounds; Carrier lifetime; Economic and social effects; Efficiency; Field emission cathodes; Hydrogen; Light absorption; Metal insulator boundaries; Metals; MIS devices; Oxygen; Photocathodes; Photoelectrochemical cells; Semiconducting silicon; Semiconductor insulator boundaries; Semiconductor junctions; Silicon compounds; Solar power generation; Titanium dioxide; Amorphous silicon (a-Si); Hydrogen evolution reactions; Metal-insulator-semiconductors; Minority carrier lifetimes; Oxygen evolution reaction; Photon-to-current efficiencies; Reversible hydrogen electrodes; Solar-to-hydrogen conversions; Passivation; chemical reaction; efficiency measurement; electrode; energy efficiency; hydrogen; insulation; nitrogen; oxygen; silicon
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/189746
作者单位	Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China; Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China; GCL System Integration Technology Co., Ltd, Suzhou, 215000, China
推荐引用方式 GB/T 7714	Liu B.,Feng S.,Yang L.,et al. Bifacial passivation of: N -silicon metal-insulator-semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions[J],2020,13(1).
APA	Liu B..,Feng S..,Yang L..,Li C..,Luo Z..,...&Gong J..(2020).Bifacial passivation of: N -silicon metal-insulator-semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions.Energy & Environmental Science,13(1).
MLA	Liu B.,et al."Bifacial passivation of: N -silicon metal-insulator-semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions".Energy & Environmental Science 13.1(2020).