气候变化领域集成服务门户(CCPortal): Metal composition influences optoelectronic quality in mixed-metal lead-tin triiodide perovskite solar absorbers

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DOI	10.1039/d0ee00132e
	Metal composition influences optoelectronic quality in mixed-metal lead-tin triiodide perovskite solar absorbers
	Klug M.T.; Milot R.L.; Milot R.L.; Patel J.B.; Green T.; Sansom H.C.; Farrar M.D.; Ramadan A.J.; Martani S.; Wang Z.; Wenger B.; Ball J.M.; Langshaw L.; Petrozza A.; Johnston M.B.; Herz L.M.; Snaith H.J.
发表日期	2020
ISSN	17545692
起始页码	1776
结束页码	1787
卷号	13 期号:6
英文摘要	Current designs for all-perovskite multi-junction solar cells require mixed-metal Pb-Sn compositions to achieve narrower band gaps than are possible with their neat Pb counterparts. The lower band gap range achievable with mixed-metal Pb-Sn perovskites also encompasses the 1.3 to 1.4 eV range that is theoretically ideal for maximising the efficiency of single-junction devices. Here we examine the optoelectronic quality and photovoltaic performance of the ((HC(NH2)2)0.83Cs0.17)(Pb1-ySny)I3 family of perovskite materials across the full range of achievable band gaps by substituting between 0.001% and 70% of the Pb content with Sn. We reveal that a compositional range of "defectiveness"exists when Sn comprises between 0.5% and 20% of the metal content, but that the optoelectronic quality is restored for Sn content between 30-50%. When only 1% of Pb content is replaced by Sn, we find that photoconductivity, photoluminescence lifetime, and photoluminescence quantum efficiency are reduced by at least an order of magnitude, which reveals that a small concentration of Sn incorporation produces trap sites that promote non-radiative recombination in the material and limit photovoltaic performance. While these observations suggest that band gaps between 1.35 and 1.5 eV are unlikely to be useful for optoelectronic applications without countermeasures to improve material quality, highly efficient narrower band gap absorber materials are possible at or below 1.33 eV. Through optimising single-junction photovoltaic devices with Sn compositions of 30% and 50%, we respectively demonstrate a 17.6% efficient solar cell with an ideal single-junction band gap of 1.33 eV and an 18.1% efficient low band gap device suitable for the bottom absorber in all-perovskite multi-junction cells. © The Royal Society of Chemistry.
英文关键词	Binary alloys; Efficiency; Energy gap; Lead alloys; Lead compounds; Metals; Multi-junction solar cells; Perovskite; Perovskite solar cells; Photoluminescence; Tin alloys; Tin compounds; Multi-junction cells; Non-radiative recombinations; Optoelectronic applications; Photoluminescence lifetime; Photoluminescence quantum efficiency; Photovoltaic devices; Photovoltaic performance; Single junction devices; Solar absorbers
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/189636
作者单位	Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom; Department of Physics, University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, United Kingdom; Center for Nano Science and Technology @Polimi, Istituto Italiano di Tecnologia, Milan, Italy
推荐引用方式 GB/T 7714	Klug M.T.,Milot R.L.,Milot R.L.,et al. Metal composition influences optoelectronic quality in mixed-metal lead-tin triiodide perovskite solar absorbers[J],2020,13(6).
APA	Klug M.T..,Milot R.L..,Milot R.L..,Patel J.B..,Green T..,...&Snaith H.J..(2020).Metal composition influences optoelectronic quality in mixed-metal lead-tin triiodide perovskite solar absorbers.Energy & Environmental Science,13(6).
MLA	Klug M.T.,et al."Metal composition influences optoelectronic quality in mixed-metal lead-tin triiodide perovskite solar absorbers".Energy & Environmental Science 13.6(2020).