CCPortal
DOI10.1073/pnas.2007683118
Doping evolution of the Mott-Hubbard landscape in infinite-layer nickelates
Goodge B.H.; Li D.; Lee K.; Osada M.; Wang B.Y.; Sawatzky G.A.; Hwang H.Y.; Kourkoutis L.F.
发表日期2021
ISSN00278424
卷号118期号:2
英文摘要The recent observation of superconductivity in Nd08Sr02NiO2 has raised fundamental questions about the hierarchy of the underlying electronic structure. Calculations suggest that this system falls in the Mott-Hubbard regime, rather than the charge-transfer configuration of other nickel oxides and the superconducting cuprates. Here, we use state-of-the-art, locally resolved electron energy-loss spectroscopy to directly probe the Mott-Hubbard character of Nd1−xSrxNiO2. Upon doping, we observe emergent hybridization reminiscent of the Zhang-Rice singlet via the oxygen-projected states, modification of the Nd 5d states, and the systematic evolution of Ni 3d hybridization and filling. These experimental data provide direct evidence for the multiband electronic structure of the superconducting infinite-layer nickelates, particularly via the effects of hole doping on not only the oxygen but also nickel and rare-earth bands. © This open access article is distributed under Creative Commons Attribution-NonCommercialNoDerivatives License 4.0 (CC BY-NC-ND).
英文关键词Electron energy-loss spectroscopy; Hole doping; Infinite-layer nickelates; Mott-Hubbard regime; Superconductivity
语种英语
来源期刊Proceedings of the National Academy of Sciences of the United States of America
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/181079
作者单位School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, United States; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, United States; Department of Applied Physics, Stanford University, Stanford, CA 94305, United States; Department of Physics, Stanford University, Stanford, CA 94305, United States; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States; Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z1, Canada; Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z1, Canada
推荐引用方式
GB/T 7714
Goodge B.H.,Li D.,Lee K.,et al. Doping evolution of the Mott-Hubbard landscape in infinite-layer nickelates[J],2021,118(2).
APA Goodge B.H..,Li D..,Lee K..,Osada M..,Wang B.Y..,...&Kourkoutis L.F..(2021).Doping evolution of the Mott-Hubbard landscape in infinite-layer nickelates.Proceedings of the National Academy of Sciences of the United States of America,118(2).
MLA Goodge B.H.,et al."Doping evolution of the Mott-Hubbard landscape in infinite-layer nickelates".Proceedings of the National Academy of Sciences of the United States of America 118.2(2021).
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Goodge B.H.]的文章
[Li D.]的文章
[Lee K.]的文章
百度学术
百度学术中相似的文章
[Goodge B.H.]的文章
[Li D.]的文章
[Lee K.]的文章
必应学术
必应学术中相似的文章
[Goodge B.H.]的文章
[Li D.]的文章
[Lee K.]的文章
相关权益政策
暂无数据
收藏/分享

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。