气候变化领域集成服务门户(CCPortal): Operando characterization of conductive filaments during resistive switching in Mott VO2

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DOI	10.1073/pnas.2013676118
	Operando characterization of conductive filaments during resistive switching in Mott VO2
	Cheng S.; Lee M.-H.; Li X.; Fratino L.; Tesler F.; Han M.-G.; del Valle J.; Dynes R.C.; Rozenberg M.J.; Schuller I.K.; Zhu Y.
发表日期	2021
ISSN	00278424
卷号	118 期号:9
英文摘要	Vanadium dioxide (VO2) has attracted much attention owing to its metal-insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal-insulator transition and that vacancy diffusion can erase the filament, allowing for the system to “forget.” Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing. © This open access article is distributed under Creative Commons Attribution-NonCommercialNoDerivatives License 4.0 (CC BY-NC-ND).
英文关键词	Conductive filament; Neuromorphic computing; Nonvolatile switching; Transmission electron microscopy
语种	英语
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/180477
作者单位	Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, United States; Materials Science and Engineering Program, University of California San Diego, San Diego, CA 92093, United States; Department of Physics, Center for Advanced Nanoscience, University of California San Diego, San Diego, CA 92093, United States; School of Physics and Microelectronics, Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou, Henan, 450052, China; Laboratoire de Physique des Solides, CNRS, Université Paris-Sud, Université Paris-Saclay, Orsay, 91405, France; Department of Integrative and Computational Neuroscience, Paris-Saclay Institute of Neuroscience, CNRS, Gif-sur-Yvette, 91198, France; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, Geneva, 1211, Switzerland
推荐引用方式 GB/T 7714	Cheng S.,Lee M.-H.,Li X.,et al. Operando characterization of conductive filaments during resistive switching in Mott VO2[J],2021,118(9).
APA	Cheng S..,Lee M.-H..,Li X..,Fratino L..,Tesler F..,...&Zhu Y..(2021).Operando characterization of conductive filaments during resistive switching in Mott VO2.Proceedings of the National Academy of Sciences of the United States of America,118(9).
MLA	Cheng S.,et al."Operando characterization of conductive filaments during resistive switching in Mott VO2".Proceedings of the National Academy of Sciences of the United States of America 118.9(2021).