气候变化领域集成服务门户(CCPortal): Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity

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DOI	10.1073/pnas.2021203118
	Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity
	Yang B.; Uphoff M.; Zhang Y.-Q.; Reichert J.; Seitsonen A.P.; Bauer A.; Pfleiderer C.; Barth J.V.
发表日期	2021
ISSN	00278424
卷号	118 期号:17
英文摘要	Iron silicide (FeSi) is a fascinating material that has attracted extensive research efforts for decades, notably revealing unusual temperature-dependent electronic and magnetic characteristics, as well as a close resemblance to the Kondo insulators whereby a coherent picture of intrinsic properties and underlying physics remains to be fully developed. For a better understanding of this narrow-gap semiconductor, we prepared and examined FeSi(110) single-crystal surfaces of high quality. Combined insights from low-temperature scanning tunneling microscopy and density functional theory calculations (DFT) indicate an unreconstructed surface termination presenting rows of Fe–Si pairs. Using high-resolution tunneling spectroscopy (STS), we identify a distinct asymmetric electronic gap in the sub-10 K regime on defect-free terraces. Moreover, the STS data reveal a residual density of states in the gap regime whereby two in-gap states are recognized. The principal origin of these features is rationalized with the help of the DFT-calculated band structure. The computational modeling of a (110)-oriented slab notably evidences the existence of interfacial intragap bands accounting for a markedly increased density of states around the Fermi level. These findings support and provide further insight into the emergence of surface metallicity in the low-temperature regime. © 2021 National Academy of Sciences. All rights reserved.
英文关键词	Correlated electrons; In-gap state; Iron silicide; Scanning tunneling microscopy; Surface conductivity
语种	英语
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/179770
作者单位	Physics Department, Technical University of Munich, Garching, D-85748, Germany; Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China; Département de Chimie, École Normale Supérieure, Paris, F-75005, France; Université de Recherche Paris-Sciences-et-Lettres, Sorbonne Université, Centre National de la Recherche Scientifique, Unité Mixte de Recherche 8640, Paris, F-75005, France; Munich Centre for Quantum Science and Technology (MCQST), Technical University of Munich, Garching, D-85748, Germany; Centre for Quantum Engineering (ZQE), Technical University of Munich, Garching, D-85748, Germany
推荐引用方式 GB/T 7714	Yang B.,Uphoff M.,Zhang Y.-Q.,et al. Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity[J],2021,118(17).
APA	Yang B..,Uphoff M..,Zhang Y.-Q..,Reichert J..,Seitsonen A.P..,...&Barth J.V..(2021).Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity.Proceedings of the National Academy of Sciences of the United States of America,118(17).
MLA	Yang B.,et al."Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity".Proceedings of the National Academy of Sciences of the United States of America 118.17(2021).