气候变化领域集成服务门户(CCPortal): Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites

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DOI	10.1002/adma.201806385
	Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites
	Yu J.; Kong J.; Hao W.; Guo X.; He H.; Leow W.R.; Liu Z.; Cai P.; Qian G.; Li S.; Chen X.; Chen X.
发表日期	2019
ISSN	9359648
卷号	31 期号:7
英文摘要	As emerging efficient emitters, metal-halide perovskites offer the intriguing potential to the low-cost light emitting devices. However, semiconductors generally suffer from severe luminescence quenching due to insufficient confinement of excitons (bound electron–hole pairs). Here, Sn-triggered extrinsic self-trapping of excitons in bulk 2D perovskite crystal, PEA 2 PbI 4 (PEA = phenylethylammonium), is reported, where exciton self-trapping never occurs in its pure state. By creating local potential wells, isoelectronic Sn dopants initiate the localization of excitons, which would further induce the large lattice deformation around the impurities to accommodate the self-trapped excitons. With such self-trapped states, the Sn-doped perovskites generate broadband red-to-near-infrared (NIR) emission at room temperature due to strong exciton–phonon coupling, with a remarkable quantum yield increase from 0.7% to 6.0% (8.6 folds), reaching 42.3% under a 100 mW cm −2 excitation by extrapolation. The quantum yield enhancement stems from substantial higher thermal quench activation energy of self-trapped excitons than that of free excitons (120 vs 35 meV). It is further revealed that the fast exciton diffusion involves in the initial energy transfer step by transient absorption spectroscopy. This dopant-induced extrinsic exciton self-trapping approach paves the way for extending the spectral range of perovskite emitters, and may find emerging application in efficient supercontinuum sources. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
英文关键词	extrinsic; luminescence; perovskites; self-trapped excitons; Sn-doping
scopus关键词	Absorption spectroscopy; Activation energy; Crystal impurities; Energy transfer; Infrared devices; Lead compounds; Luminescence; Metal halides; Perovskite; Quantum theory; Quantum yield; Semiconductor doping; extrinsic; Extrinsic self-trapping; Light emitting devices; Near-infrared emissions; Self trapped excitons; Sn doping; Supercontinuum sources; Transient absorption spectroscopies; Excitons
来源期刊	Advanced Materials
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/176491
作者单位	Innovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological University Singapore, Singapore, 639798, Singapore; CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
推荐引用方式 GB/T 7714	Yu J.,Kong J.,Hao W.,et al. Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites[J],2019,31(7).
APA	Yu J..,Kong J..,Hao W..,Guo X..,He H..,...&Chen X..(2019).Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites.Advanced Materials,31(7).
MLA	Yu J.,et al."Broadband Extrinsic Self-Trapped Exciton Emission in Sn-Doped 2D Lead-Halide Perovskites".Advanced Materials 31.7(2019).