气候变化领域集成服务门户(CCPortal): Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors

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DOI	10.1073/pnas.1715465115
	Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors
	Gong S.-J.; Gong C.; Sun Y.-Y.; Tong W.-Y.; Duan C.-G.; Chu J.-H.; Zhang X.
发表日期	2018
ISSN	0027-8424
起始页码	8511
结束页码	8516
卷号	115 期号:34
英文摘要	Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials. Half metallicity, an intriguing physical property arising from the metallic nature of electrons with singular spin polarization and insulating for oppositely polarized electrons, holds a great potential for a 100% spin-polarized current for high-efficiency spintronics. Conventionally synthesized thin films hardly sustain half metallicity inherited from their 3D counterparts. A fundamental challenge, in systems of reduced dimensions, is the almost inevitable spin-mixed edge or surface states in proximity to the Fermi level. Here, we predict electric field-induced half metallicity in bilayer A-type antiferromagnetic van der Waals crystals (i.e., intralayer ferromagnetism and interlayer antiferromagnetism), by employing density functional theory calculations on vanadium diselenide. Electric fields lift energy levels of the constituent layers in opposite directions, leading to the gradual closure of the gap of singular spin-polarized states and the opening of the gap of the others. We show that a vertical electrical field is a generic and effective way to achieve half metallicity in A-type antiferromagnetic bilayers and realize the spin field effect transistor. The electric field-induced half metallicity represents an appealing route to realize 2D half metals and opens opportunities for nanoscale highly efficient antiferromagnetic spintronics for information processing and storage. © 2018 National Academy of Sciences. All Rights Reserved.
英文关键词	2D magnetism; 2D materials; Antiferromagnetic spintronics; Half metallicity; Spin field effect transistor
语种	英语
scopus关键词	metal; vanadium; acceleration; anisotropy; antiferromagnet; Article; density; electric conductivity; electric field; electromagnetism; electron; energy; magnetic field; nanotechnology; polarization; priority journal
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/160476
作者单位	Gong, S.-J., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China; Gong, C., Nanoscale Science and Engineering Center, University of California, Berkeley, CA 94720, United States, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States; Sun, Y.-Y., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China; Tong, W.-Y., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, China; Duan, C.-G., Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai, 200062, Chin...
推荐引用方式 GB/T 7714	Gong S.-J.,Gong C.,Sun Y.-Y.,et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors[J],2018,115(34).
APA	Gong S.-J..,Gong C..,Sun Y.-Y..,Tong W.-Y..,Duan C.-G..,...&Zhang X..(2018).Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors.Proceedings of the National Academy of Sciences of the United States of America,115(34).
MLA	Gong S.-J.,et al."Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors".Proceedings of the National Academy of Sciences of the United States of America 115.34(2018).