气候变化领域集成服务门户(CCPortal): Designing antiphase boundaries by atomic control of heterointerfaces

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DOI	10.1073/pnas.1808812115
	Designing antiphase boundaries by atomic control of heterointerfaces
	Wang Z.; Guo H.; Shao S.; Saghayezhian M.; Li J.; Fittipaldi R.; Vecchione A.; Siwakoti P.; Zhu Y.; Zhang J.; Plummer E.W.
发表日期	2018
ISSN	0027-8424
起始页码	9485
结束页码	9490
卷号	115 期号:38
英文摘要	Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La 2/3 Sr 1/3 MnO 3 thin film grown on Sr 2 RuO 4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory. © 2018 National Academy of Sciences. All rights reserved.
英文关键词	Antiphase boundary; Electron microscopy; Extended defect nucleation; Interfaces; Theory
语种	英语
scopus关键词	nuclease; ruthenium; ruthenium tetroxide; strontium; unclassified drug; antiphase boundary; Article; atomic resolved electron microscopy; behavior; biofilm; calculation; chemical parameters; electron microscopy; energy; enzyme substrate; priority journal; structure analysis
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/160464
作者单位	Wang, Z., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States, Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States; Guo, H., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States; Shao, S., Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803, United States; Saghayezhian, M., Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, United States; Li, J., Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, United States; Fittipaldi, R., Consiglio Nazionale Delle Ricerche-Superconducting and Other Innovative Materials and Devices Institute (SPIN), Dipartimento di Fisica, Università di Salerno, Fisciano, 132 - 84084, Italy; Vecchione, A., Consiglio Nazionale Delle Ricerche-Superconducting and Other Inno...
推荐引用方式 GB/T 7714	Wang Z.,Guo H.,Shao S.,et al. Designing antiphase boundaries by atomic control of heterointerfaces[J],2018,115(38).
APA	Wang Z..,Guo H..,Shao S..,Saghayezhian M..,Li J..,...&Plummer E.W..(2018).Designing antiphase boundaries by atomic control of heterointerfaces.Proceedings of the National Academy of Sciences of the United States of America,115(38).
MLA	Wang Z.,et al."Designing antiphase boundaries by atomic control of heterointerfaces".Proceedings of the National Academy of Sciences of the United States of America 115.38(2018).