气候变化领域集成服务门户(CCPortal): Spectral dynamics of shift current in ferroelectric semiconductor SbSI

CCPortal

DOI	10.1073/pnas.1802427116
	Spectral dynamics of shift current in ferroelectric semiconductor SbSI
	Sotome M.; Nakamura M.; Fujioka J.; Ogino M.; Kaneko Y.; Morimoto T.; Zhang Y.; Kawasaki M.; Nagaosa N.; Tokura Y.; Ogawa N.
发表日期	2019
ISSN	0027-8424
起始页码	1929
结束页码	1933
卷号	116 期号:6
英文摘要	Photoexcitation in solids brings about transitions of electrons/ holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the geometric phase of the constituting electronic bands: the Berry connection. This photocurrent, termed shift current, is expected to emerge on the timescale of primary photoexcitation process. We observe ultrafast evolution of the shift current in a prototypical ferroelectric semiconductor antimony sulfur iodide (SbSI) by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the bandgap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection on interband optical transition. The shift excitation carries a net charge flow and is followed by a swing over of the electron cloud on a subpicosecond timescale. Understanding these substantive characters of the shift current with the help of first-principles calculation will pave the way for its application to ultrafast sensors and solar cells. © 2019 National Academy of Sciences. All Rights Reserved.
英文关键词	Bulk matter; Ferroelectricity; Photovoltaic effect; Picosecond techniques; Solar cells
语种	英语
scopus关键词	antimony derivative; antimony sulfur iodide; iodine derivative; sulfur derivative; unclassified drug; Article; dynamics; electric current; electromagnetic radiation; electron transport; factor analysis; ferroelectric semiconductor; mathematical computing; photon; priority journal; terahertz radiation
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/160379
作者单位	Sotome, M., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan; Nakamura, M., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan, PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, 332-0012, Japan; Fujioka, J., PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, 332-0012, Japan, Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Ogino, M., Department of Applied Physics and Quantum Phase Electronics Center, University of Tokyo, Tokyo, 113-8656, Japan; Kaneko, Y., RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan; Morimoto, T., Department of Physics, University of California, Berkeley, CA 94720, United States; Zhang, Y., Solid State Chemistry, Max Planck Institute for Chemical Physics of Solids, Dresden, 01187, Germany, Institute for Theoretical Solid State Physics, Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany; Kawasaki, M., RIK...
推荐引用方式 GB/T 7714	Sotome M.,Nakamura M.,Fujioka J.,et al. Spectral dynamics of shift current in ferroelectric semiconductor SbSI[J],2019,116(6).
APA	Sotome M..,Nakamura M..,Fujioka J..,Ogino M..,Kaneko Y..,...&Ogawa N..(2019).Spectral dynamics of shift current in ferroelectric semiconductor SbSI.Proceedings of the National Academy of Sciences of the United States of America,116(6).
MLA	Sotome M.,et al."Spectral dynamics of shift current in ferroelectric semiconductor SbSI".Proceedings of the National Academy of Sciences of the United States of America 116.6(2019).