气候变化领域集成服务门户(CCPortal): Bond-breaking induced lifshitz transition in robust dirac semimetal VAI3

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DOI	10.1073/pnas.1917697117
	Bond-breaking induced lifshitz transition in robust dirac semimetal VAI3
	Liu Y.; Liu Y.-F.; Gui X.; Xiang C.; Zhou H.-B.; Hsu C.-H.; Lin H.; Chang T.-R.; Xie W.; Jia S.
发表日期	2020
ISSN	0027-8424
起始页码	15517
结束页码	15523
卷号	117 期号:27
英文摘要	Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper, we report that the type-II Dirac semimetal VAl3 hosts exceptional, robust topological electrons which can tolerate extreme change of chemical composition. The Dirac electrons remain intact, even after a substantial part of V atoms have been replaced in the V1-xTixAl3solid solutions. This Dirac semimetal state ends at x = 0:35, where a Lifshitz transition to p-type trivial metal occurs. The V-Al bond is completely broken in this transition as long as the bonding orbitals are fully depopulated by the holes donated from Ti substitution. In other words, the Dirac electrons in VAl3are protected by the V-Al bond, whose molecular orbital is their bonding gravity center. Our understanding on the interrelations among electron count, chemical bond, and electronic properties in topological semimetals suggests a rational approach to search robust, chemical-bond-protected topological materials. © 2020 National Academy of Sciences. All rights reserved.
英文关键词	Chemical bond; Dirac electron; Electron count; Lifshitz transition
语种	英语
scopus关键词	article; chemical bond; electron; gravity; substitution reaction
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/160270
作者单位	Liu, Y., International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China; Liu, Y.-F., International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China; Gui, X., Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803, United States; Xiang, C., International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China; Zhou, H.-B., International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China; Hsu, C.-H., Department of Physics, National University of Singapore, Singapore, 117542, Singapore, Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore; Lin, H., Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan; Chang, T.-R., Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan, Center for Quantum Frontiers of Research & Technology, National...
推荐引用方式 GB/T 7714	Liu Y.,Liu Y.-F.,Gui X.,et al. Bond-breaking induced lifshitz transition in robust dirac semimetal VAI3[J],2020,117(27).
APA	Liu Y..,Liu Y.-F..,Gui X..,Xiang C..,Zhou H.-B..,...&Jia S..(2020).Bond-breaking induced lifshitz transition in robust dirac semimetal VAI3.Proceedings of the National Academy of Sciences of the United States of America,117(27).
MLA	Liu Y.,et al."Bond-breaking induced lifshitz transition in robust dirac semimetal VAI3".Proceedings of the National Academy of Sciences of the United States of America 117.27(2020).