气候变化领域集成服务门户(CCPortal): Field effect transistor from individual trigonal Se nanowire

CCPortal

DOI	10.1088/0957-4484/19/35/355201
	Field effect transistor from individual trigonal Se nanowire
	Qin, Donghuan; Tao, Hong; Zhao, Yun; Lan, Linfeng; Chan, Keith; Cao, Yong
发表日期	2008
ISSN	0957-4484
卷号	19 期号:35
英文摘要	Trigonal Se nanowires (NWs) were fabricated through a high-yield chemical solution process. The morphology and structural characterization of the Se NWs were investigated using transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and x-ray diffraction (XRD). The results indicated that the Se NWs grow along the crystallographic c-axis, the direction of which is parallel to the helical chains of Se atoms. Single Se NW field effect transistor (FET) devices were prepared through photolithographic patterning. The device performance shows that the Se NWs are p-type semiconductors displaying mobility up to 30 cm(2) V-1 s(-1). This finding on the Se NW FETs has broad implications and provides very useful fundamental information necessary for future applications in the fabrication of high-quality NW FETs and other electronic devices.
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
来源期刊	NANOTECHNOLOGY
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/158676
作者单位	Cao, Y (corresponding author), S China Univ Technol, Key Lab Special Funct Mat, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China.
推荐引用方式 GB/T 7714	Qin, Donghuan,Tao, Hong,Zhao, Yun,et al. Field effect transistor from individual trigonal Se nanowire[J],2008,19(35).
APA	Qin, Donghuan,Tao, Hong,Zhao, Yun,Lan, Linfeng,Chan, Keith,&Cao, Yong.(2008).Field effect transistor from individual trigonal Se nanowire.NANOTECHNOLOGY,19(35).
MLA	Qin, Donghuan,et al."Field effect transistor from individual trigonal Se nanowire".NANOTECHNOLOGY 19.35(2008).