气候变化领域集成服务门户(CCPortal): Atomic manipulation of the gap in Bi2Sr2CaCu2O8+x

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DOI	10.1126/science.aaw7964
	Atomic manipulation of the gap in Bi2Sr2CaCu2O8+x
	Massee F.; Huang Y.K.; Aprili M.
发表日期	2020
ISSN	0036-8075
起始页码	68
结束页码	71
卷号	367 期号:6473
英文摘要	Single-atom manipulation within doped correlated electron systems could help disentangle the influence of dopants, structural defects, and crystallographic characteristics on local electronic states. Unfortunately, the high diffusion barrier in these materials prevents conventional manipulation techniques. Here, we demonstrate the possibility to reversibly manipulate select sites in the optimally doped high-temperature superconductor Bi2Sr2CaCu2O8+x using the local electric field of the tip of a scanning tunneling microscope. We show that upon shifting individual Bi atoms at the surface, the spectral gap associated with superconductivity is seen to reversibly change by as much as 15 milli-electron volts (on average ~5% of the total gap size). Our toy model, which captures all observed characteristics, suggests that the electric field induces lateral movement of local pairing potentials in the CuO2 plane. © 2020 American Association for the Advancement of Science. All rights reserved.
关键词	bismuth calcium copper cupric oxide oxygen strontium coating copper crystallography electric field electron superconductivity Article chemical modification electric field electric potential high temperature physical chemistry priority journal scanning tunneling microscopy superconductivity surface property
语种	英语
来源机构	Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/133811
推荐引用方式 GB/T 7714	Massee F.,Huang Y.K.,Aprili M.. Atomic manipulation of the gap in Bi2Sr2CaCu2O8+x[J]. Science,2020,367(6473).
APA	Massee F.,Huang Y.K.,&Aprili M..(2020).Atomic manipulation of the gap in Bi2Sr2CaCu2O8+x.,367(6473).
MLA	Massee F.,et al."Atomic manipulation of the gap in Bi2Sr2CaCu2O8+x".367.6473(2020).