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DOI10.1126/science.aay5533
Intrinsic quantized anomalous Hall effect in a moiré heterostructure
Serlin M.; Tschirhart C.L.; Polshyn H.; Zhang Y.; Zhu J.; Watanabe K.; Taniguchi T.; Balents L.; Young A.F.
发表日期2020
ISSN0036-8075
起始页码900
结束页码903
卷号367期号:6480
英文摘要The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. © 2020 American Association for the Advancement of Science. All rights reserved.
关键词energymagnetic fieldphysicspolarizationquantum mechanicstemperature profiletopologyanisotropyArticlechemical analysischemical interactionchemical structureconductancehysteresismagnetic fieldmagnetismphenomenologyphysical parameterspolarizationpriority journalquantum anomalous Hall effectquantum chemistry
语种英语
来源机构Science
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/133687
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Serlin M.,Tschirhart C.L.,Polshyn H.,et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure[J]. Science,2020,367(6480).
APA Serlin M..,Tschirhart C.L..,Polshyn H..,Zhang Y..,Zhu J..,...&Young A.F..(2020).Intrinsic quantized anomalous Hall effect in a moiré heterostructure.,367(6480).
MLA Serlin M.,et al."Intrinsic quantized anomalous Hall effect in a moiré heterostructure".367.6480(2020).
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