气候变化领域集成服务门户(CCPortal): Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature

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DOI	10.1126/science.aay8663
	Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature
	Custer J.P.; Jr.; Low J.D.; Hill D.J.; Teitsworth T.S.; Christesen J.D.; McKinney C.J.; McBride J.R.; Brooke M.A.; Warren S.C.; Cahoon J.F.
发表日期	2020
ISSN	0036-8075
起始页码	177
结束页码	180
卷号	368 期号:6487
英文摘要	Ratcheting effects play an important role in systems ranging from mechanical socket wrenches to biological motor proteins. The underlying principle is to convert a fluctuating, unbiased force into unidirectional motion. Here, we report the ratcheting of electrons at room temperature using a semiconductor nanowire with precisely engineered asymmetry. Modulation of the nanowire diameter creates a cylindrical sawtooth geometry with broken inversion symmetry on a nanometer-length scale. In a two-terminal device, this structure responded as a three-dimensional geometric diode that funnels electrons preferentially in one direction through specular reflection of quasi-ballistic electrons at the nanowire surface. The ratcheting effect causes charge rectification at frequencies exceeding 40 gigahertz, demonstrating the potential for applications such as high-speed data processing and long-wavelength energy harvesting. © 2020 The Authors.
关键词	aluminum oxide gold nanoparticle nanowire silicon data processing electron geometry silicon temperature effect analytic method Article data processing direct current electric capacitance electric current electron energy resource experimental test finite element analysis low temperature procedures mathematical model nanofabrication priority journal reaction time room temperature scanning electron microscopy scanning transmission electron microscopy signal processing three-dimensional imaging tilting
语种	英语
来源机构	Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/133573
推荐引用方式 GB/T 7714	Custer J.P.,Jr.,Low J.D.,et al. Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature[J]. Science,2020,368(6487).
APA	Custer J.P..,Jr..,Low J.D..,Hill D.J..,Teitsworth T.S..,...&Cahoon J.F..(2020).Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature.,368(6487).
MLA	Custer J.P.,et al."Ratcheting quasi-ballistic electrons in silicon geometric diodes at room temperature".368.6487(2020).