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DOI10.1126/science.aba3433
Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites
Kim D.; Jung H.J.; Park I.J.; Larson B.W.; Dunfield S.P.; Xiao C.; Kim J.; Tong J.; Boonmongkolras P.; Ji S.G.; Zhang F.; Pae S.R.; Kim M.; Kang S.B.; Dravid V.; Berry J.J.; Kim J.Y.; Zhu K.; Kim D.H.; Shin B.
发表日期2020
ISSN0036-8075
起始页码155
结束页码160
卷号368期号:6487
英文摘要Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ∼1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells. © 2020 American Association for the Advancement of Science. All rights reserved.
关键词iodideperovskitesiliconanioncellefficiency measurementperovskitesiliconArticlecell engineeringcontrolled studyenergy transferparticle sizepriority journalprocess optimizationscanning electron microscopytransmission electron microscopytwo-dimensional imagingX ray diffraction
语种英语
来源机构Science
文献类型期刊论文
条目标识符http://gcip.llas.ac.cn/handle/2XKMVOVA/133571
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GB/T 7714
Kim D.,Jung H.J.,Park I.J.,et al. Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites[J]. Science,2020,368(6487).
APA Kim D..,Jung H.J..,Park I.J..,Larson B.W..,Dunfield S.P..,...&Shin B..(2020).Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites.,368(6487).
MLA Kim D.,et al."Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites".368.6487(2020).
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