气候变化领域集成服务门户(CCPortal): O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy

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DOI	10.1063/1.5065527
	O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy
	Zhang, Bin; Wei, Wen-Qi; Wang, Jian-Huan; Wang, Hai-Ling; Zhao, Zhuang; Liu, Lei; Cong, Hui; Feng, Qi; Liu, Huiyun; Wang, Ting; Zhang, Jian-Jun
发表日期	2019
ISSN	2158-3226
卷号	9 期号:1
英文摘要	Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers. In this paper, we demonstrate optically pumped InAs/GaAs quantum-dot micropillar laser on exact Si (001) by (111)-faceted-sawtooth Si hollow structure via IV/III-V hybrid epitaxy. The lasing threshold of InAs/GaAs quantum- dot micropillar is as low as 20 mu W with the pillar diameter of 15 mu m. Moreover, the micropillar laser is capable of operating at maximum temperature up to 100 degrees C. (C) 2019 Author(s).
学科领域	Science & Technology - Other Topics; Materials Science; Physics
语种	英语
WOS研究方向	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
来源期刊	AIP ADVANCES
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/112098
作者单位	Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Bin,Wei, Wen-Qi,Wang, Jian-Huan,et al. O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy[J]. 中国科学院西北生态环境资源研究院,2019,9(1).
APA	Zhang, Bin.,Wei, Wen-Qi.,Wang, Jian-Huan.,Wang, Hai-Ling.,Zhao, Zhuang.,...&Zhang, Jian-Jun.(2019).O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy.AIP ADVANCES,9(1).
MLA	Zhang, Bin,et al."O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy".AIP ADVANCES 9.1(2019).